PH75S48-5, PH8230E, PH862B-A Selling Leads, Datasheet
MFG:LAMBDA D/C:07+
PH75S48-5, PH8230E, PH862B-A Datasheet download
Part Number: PH75S48-5
MFG: LAMBDA
Package Cooled:
D/C: 07+
MFG:LAMBDA D/C:07+
PH75S48-5, PH8230E, PH862B-A Datasheet download
MFG: LAMBDA
Package Cooled:
D/C: 07+
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PDF/DataSheet Download
Datasheet: PH75S48-5
File Size: 139214 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PH8230E
File Size: 238230 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PH8230
File Size: 219999 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
·N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.
·Product availability:
·PH8230E in SOT669 (LFPAK).
Symbol Parameter |
Parameter |
Conditions |
Min |
Max |
Unit |
VDS |
drain-source voltage (DC) |
25 °C Tj 150 °C |
30 |
V | |
VGS |
gate-source voltage (DC) |
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 |
±20 |
V | |
Tmb = 100 °C; VGS = 10 V; Figure 2 |
67 |
A | |||
ID |
drain current (DC) |
Tmb = 25 °C; pulsed; tp 10S; Figure 3 |
42 |
A | |
IDM |
peak drain current |
Tmb = 25 °C; Figure 1 |
268 |
A | |
Ptot |
total power dissipation |
62.5 |
W | ||
Tstg |
storage temperature |
-55 |
+150 |
°C | |
Tj |
junction temperature |
-55 |
+150 |
°C |
·Low thermal resistance
·SO8 equivalent area footprint
· Low gate drive current
· Low on-state resistance.