Position: Home  > All Categories> Integrated Circuits (ICs) > PH8230

PH8230

Features: ·Low thermal resistance·Low gate drive current·SO8 equivalent area footprint·Low on-state resistance.Application·DC-to-DC converters·Portable appliances·Switched mode power supplies·Notebook computers.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-s...

product image

PH8230 Picture
See larger image
SeekIC No. : 004460294 Detail

PH8230: Features: ·Low thermal resistance·Low gate drive current·SO8 equivalent area footprint·Low on-state resistance.Application·DC-to-DC converters·Portable appliances·Switched mode power supplies·Notebo...

PH8230 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PH8230
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Low thermal resistance
·Low gate drive current
·SO8 equivalent area footprint
·Low on-state resistance.


Application

·DC-to-DC converters
·Portable appliances
·Switched mode power supplies
·Notebook computers.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj = 25 to 175 - 30 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; - 30 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; - 120 A
Ptot total power dissipation Tmb = 25 ; - 50 W
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 30 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 120 A



Description

N-channel enhancement mode field-effect power transistor in a SOT669 (LFPAK) package.

Product availability:

PH8230 in SOT669 (LFPAK).


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
LED Products
LM24P20
KCG057QV1DB-G770
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Isolators
HCPL062N
HCPL316J
Crystals and Oscillators
WT325BI0030.000000
2SB49
Switches
US32DMRJ
HBGQ22P-11ET
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
View more