MFG:NXP Package Cooled:SOT78/TO-220AB D/C:`07+(pb-free)
PHP110NQ08T, PHP110NQ08T.127, PHP112 Datasheet download
MFG: NXP
Package Cooled: SOT78/TO-220AB
D/C: `07+(pb-free)
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PDF/DataSheet Download
Datasheet: PHP101NQ03LT
File Size: 285725 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHP101NQ03LT
File Size: 285725 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHP112
File Size: 200513 KB
Manufacturer:
Download : Click here to Download
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | 25 Tj 175 | - | 75 | V |
| VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 75 | V |
| VGS | gate-source voltage (DC) | - | ±20 | V | |
| ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 75 | A |
| Tmb = 100 ; VGS = 10 V; Figure 2 | - | 75 | A | ||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 240 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 230 | W |
| Tstg | storage temperature | -55 | +175 | ||
| Tj | junction temperature | -55 | +175 | ||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) Tmb = 25 | - | 75 | A | |
| ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 240 | A | |
| Avalanche ruggedness | |||||
| EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 75 A; tp = 0.15 ms; VDD 75 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 |
- | 560 | mJ |
P-channel enchancement mode MOS transistor in an 8-pin plastic SO8(SOT96-1)package.It has threee unique features: The first one is high speed switching. The second one is no secondary breakdwon. The third one is very low on-resistance.Otherwise, it also has some applications such as motor and actuator driver, power management,synchronized recitifying, etc.
There are some limiting values(limiting values in accordance with the absolute maximum system).Drain-source voltage(DC)(VDS) is -20 V max .Gate-source voltage is ±20 V(open drain).Drian current(DC)(ID) is -3.1 A when Ts is below 80 .Drain current(pulse peak value)(IDM) is -14 A (pulse width and duty cycle limited by maximum junction temperature).Total power dissipation(Ptot) is 2 W (up to Tsp is 80. Storage temperature(Tj) is -65 to 150.Otherwise, there are also some thermal resistances about it.Thermal resistance junction to solder point is 35 k/W . Electrical characteristics: Drain-source breakdwon voltage(V(BR)DSS ) is -20 V min when VGS is 0V, ID is -10 uA. Gate threshold voltage (VGS(TO) ) is -1 Vmin and -2.8 V max when VDS is VGS, ID is 1 mA. Drain-source leakage current(IDSS) is 1uA typ and 25 uA max when VDS is 100 V , VGS is 0 V.Gate-source leakage current(IGSS) is -100 nA max when VGS is 0 V,VDS is -15 V.Drain-source on-state resistance(RDS(ON) ) is 0.24 m max when VGS is -4.5 V ,ID is -1 A. Total gate charge is tbf nC max when VDD is 80 V , VGS is -10 V,ID is -4 A,VGS is -10 V .Gate to source charge is tbf nC max when VDS is -10 V , VGS is -10 V,ID is -4 A .
Well, this is a simple introduction to this type of product, if you want to know more about it, please pay more attention to our web. Thanks for your attention!
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