PHP129NQ04LT, PHP12N10E, PHP12N30E Selling Leads, Datasheet
MFG:NXP Package Cooled:9800 D/C:04
PHP129NQ04LT, PHP12N10E, PHP12N30E Datasheet download
Part Number: PHP129NQ04LT
MFG: NXP
Package Cooled: 9800
D/C: 04
PHP129NQ04LT, PHP12N10E, PHP12N30E
- Table of contents:
Info of PHP129NQ04LT
Info of PHP12N10E
Info of PHP12N30E
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About PHP129NQ04LT
PDF/DataSheet Download
Datasheet: PHP129NQ04LT
File Size: 98445 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About PHP12N10E
PDF/DataSheet Download
Datasheet: PHP12N10E
File Size: 73822 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHP101NQ03LT
PDF/DataSheet Download
Datasheet: PHP101NQ03LT
File Size: 285725 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PHP129NQ04LT General Description
Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
PHP129NQ04LT Maximum Ratings
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | 25 Tj 175 | - | 40 | V |
| VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 40 | V |
| VGS | gate-source voltage (DC) | - | ±15 | V | |
| ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 75 | A |
| Tmb = 100 ; VGS = 10 V; Figure 2 | - | 75 | A | ||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 240 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 200 | W |
| Tstg | storage temperature | -55 | +175 | ||
| Tj | junction temperature | -55 | +175 | ||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) Tmb = 25 | - | 75 | A | |
| ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 240 | A | |
| Avalanche ruggedness | |||||
| EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 69 A; tp = 0.27 ms; VDD 40 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 |
- | 475 | mJ |
PHP129NQ04LT Features
·Logic level threshold
·Very low on-state resistance.
PHP129NQ04LT Typical Application
·Motors, lamps, solenoids
·DC-to-DC converters
·Uninterruptible power supplies
·General industrial applications.
·DC-to-DC converters
·Uninterruptible power supplies
·General industrial applications.
PHP129NQ04LT Connection Diagram
PHP12N10E General Description
N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
PHP12N10E Maximum Ratings
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
VDS |
Drain-source voltage |
- |
- |
100 |
V |
|
VDGR |
Drain-gate voltage |
RGS = 20 W |
- |
100 |
V |
|
±VGS |
Gate-source voltage |
- |
- |
30 |
V |
|
ID |
Drain current (DC) |
Tmb = 25 |
- |
14 |
A |
|
ID |
Drain current (DC) |
Tmb = 100 |
- |
10 |
A |
|
IDM |
Drain current (pulse peak value) |
Tmb = 25 |
- |
56 |
A |
|
Ptot |
Total power dissipation |
Tmb = 25 |
- |
75 |
W |
|
Tstg |
Storage temperature |
- |
-55 |
175 |
|
|
Tj |
Junction Temperature |
- |
- |
175 |
PHP12N10E Typical Application
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
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