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PHP12NQ15T, PHP130N03LT, PHP130N03T

Table of contents:
Info of PHP12NQ15T
Info of PHP130N03LT
Info of PHP130N03T

PHP12NQ15T, PHP130N03LT, PHP130N03T Selling Leads, Datasheet

MFG:NXP Package Cooled:9800 D/C:08+/09+

PHP12NQ15T, PHP130N03LT, PHP130N03T Picture

PHP12NQ15T, PHP130N03LT, PHP130N03T Datasheet download

Five Points

Part Number: PHP12NQ15T

MFG: NXP

Package Cooled: 9800

D/C: 08+/09+

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PHP12NQ15T General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.

The PHP12NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package.

The PHB12NQ15T is supplied in the SOT404 (D2PAK) surface mounting package.

The PHD12NQ15T is supplied in the SOT428 (DPAK) surface mounting package.

PHP12NQ15T Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DSS	Drain-source voltage	T_j =25 to 175	-	150	V
V_DGR	Drain-gate voltage	T_j =25 to 175 ; R_GS = 20 k	-	150	V
V_GS	Gate-source voltage		--	±20	V
I_D	Continuous drain current	T_mb= 25 ; V_GS = 10 V		12.5	A
I_D	Continuous drain current	T_mb= 100 ; V_GS = 10 V	-	8.8	A
I_DM	Pulsed drain current	T_mb= 25	-	50	A
P_D	Total power dissipation	T_mb= 25	-	88	W
T_j, T_stg	Operating junction and storage temperature		-55	175

PHP12NQ15T Features

• 'Trench' technology
• Low on-state resistance
• Fast switching
• Low thermal resistance

PHP12NQ15T Connection Diagram

PHP130N03LT General Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.

PHP130N03LT Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DSSV_DGR V_GS I_D I_DM P_totT_j, T_stg	Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature	T_j = 25 to 175 T_j= 25 to 175; R_GS= 20 kW T_mb = 25 ;V_GS= 5 V T_mb = 100 ;V_GS= 5 V T_mb = 25 T_mb = 25	- - - - - - - - 55	30 30 ± 13 75 75 240 187 175	V V V A A A W

PHP130N03LT Features

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance

PHP130N03LT Connection Diagram

PHP130N03T General Description

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.

PHP130N03T Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS	Drain-source voltage	-	-	30	V
V_DGR	Drain-gate voltage	R_GS = 20 W	-	30	V
±V_GS	Gate-source voltage	-	-	15	V
I_D	Drain current (DC)	Tmb = 25	-	45	A
I_D	Drain current (DC)	Tmb = 100	-	36	A
I_DM	Drain current (pulse peak value)	Tmb = 25	-	180	A
P_tot	Total power dissipation	Tmb = 25	-	86	W
T_stg,T_j	Storage & operating temperature	-	-55	175

PHP130N03T Typical Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

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