PHP13N40E, PHP14NQ20T, PHP152NQ03LT Selling Leads, Datasheet
MFG:PH Package Cooled:9800 D/C:TO
PHP13N40E, PHP14NQ20T, PHP152NQ03LT Datasheet download
Part Number: PHP13N40E
MFG: PH
Package Cooled: 9800
D/C: TO
MFG:PH Package Cooled:9800 D/C:TO
PHP13N40E, PHP14NQ20T, PHP152NQ03LT Datasheet download
MFG: PH
Package Cooled: 9800
D/C: TO
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Datasheet: PHP13N40E
File Size: 107366 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHP14NQ20T
File Size: 276256 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHP152NQ03LT
File Size: 104688 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
400 400 ± 30 13.7 8.7 55 156 150 |
V V V A A A W |
N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS | Drain-source voltage | Tj =25 to 150 | - | 200 | V |
VDGR | Drain-gate voltage | Tj =25 to 150 ; RGS = 20 k | - | 200 | V |
VGS | Gate-source voltage | -- | ±20 | V | |
ID | Continuous drain current | Tmb = 25 ;VGS = 10 V | 14 | A | |
Tmb = 100 ;VGS = 10 V | - | 10 | A | ||
IDM | Pulsed drain current | Tmb = 25 | - | 56 | A |
PD | Total dissipation | Tmb = 25 | - | 125 | W |
Tj, Tstg | Operating junction and storage temperature |
-55 | 175 |
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | Tj =25 to 150 | - | 25 | V |
VDGR | drain-gate voltage (DC) | Tj =25 to 150 ; RGS = 20 k | - | 25 | V |
ID | drain current (DC) | Tmb = 25 ; VGS = 5 V; Figure 2 and 3 | - | 75 | A |
Tmb = 100 ; VGS = 5 V; Figure 2 | - | 75 | A | ||
VGS | gate-source voltage (DC) | - | ±20 | V | |
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 ms; Figure 3 | - | 240 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 230 | W |
Tstg | storage temperature | +175 | |||
Tj | junction temperature | +175 | |||
Source-drain diode | |||||
IS | source (diode forward) current (DC) | Tmb = 25 | - | 75 | A |
ISM | peak source (diode forward) current | Tmb = 25 ; pulsed; tp 10 ms | - | 240 | A |