PHP18NQ20T, PHP191NQ06LT, PHP193NQ06T Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:TO220 D/C:O1
PHP18NQ20T, PHP191NQ06LT, PHP193NQ06T Datasheet download
Part Number: PHP18NQ20T
MFG: PHILIPS
Package Cooled: TO220
D/C: O1
MFG:PHILIPS Package Cooled:TO220 D/C:O1
PHP18NQ20T, PHP191NQ06LT, PHP193NQ06T Datasheet download
MFG: PHILIPS
Package Cooled: TO220
D/C: O1
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Datasheet: PHP18NQ20T
File Size: 98547 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHP191NQ06LT
File Size: 94150 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHP193NQ06T
File Size: 94991 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
200 200 ± 20 16 11 64 136 175 |
V V V A A A W |
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | 25 Tj 175 | - | 55 | V |
VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 55 | V |
VGS | gate-source voltage (DC) | - | ±15 | V | |
ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 75 | A |
Tmb = 100 ; VGS = 10 V; Figure 2 | - | 75 | A | ||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 240 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 300 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IS | source (diode forward) current (DC) Tmb = 25 | - | 75 | A | |
ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 240 | A | |
Avalanche ruggedness | |||||
EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 75 A; tp = < 0.21 ms; VDD 55 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 |
- | 560 | mJ |
Symbol | Parameter | Conditions | Min Unit | Max | Unit |
VDS | drain-source voltage (DC) | 25 °C Tj 175 °C | - | 55 | V |
VDGR | drain-gate voltage (DC) | 25 °C Tj 175 °C; RGS = 20 kW | - | 55 | V |
VGS | gate-source voltage (DC) | - | ±15 | V | |
ID | drain current (DC) | Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 | - | 75 | A |
Tmb = 100 °C; VGS = 10 V; Figure 2 | - | 75 | A | ||
IDM | peak drain current | Tmb = 25 °C; pulsed; tp 10 ms; Figure 3 | - | 240 | A |
Ptot | total power dissipation | Tmb = 25 °C; Figure 1 | - | 300 | W |
Tstg | storage temperature | -55 | +175 | °C | |
Tj | junction temperature | -55 | +175 | °C |