PHP20N06T, PHP20NQ20T, PHP212 Selling Leads, Datasheet
MFG:NXP Package Cooled:07+ D/C:04
PHP20N06T, PHP20NQ20T, PHP212 Datasheet download
Part Number: PHP20N06T
MFG: NXP
Package Cooled: 07+
D/C: 04
MFG:NXP Package Cooled:07+ D/C:04
PHP20N06T, PHP20NQ20T, PHP212 Datasheet download
MFG: NXP
Package Cooled: 07+
D/C: 04
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Datasheet: PHP20N06T
File Size: 342233 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHP20NQ20T
File Size: 105973 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHP212
File Size: 114025 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | - | 55 | V | |
VDGR | drain-gate voltage (DC) | RGS = 20 k | - | 55 | V |
VGS | gate-source voltage (DC) | - | ±20 | V | |
ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 20.3 | A |
Tmb = 100 ; VGS = 10 V; Figure 2 | - | 14.3 | A | ||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 81 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 62 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | operating junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IDR | reverse drain current (DC) | Tmb = 25 | - | 20.3 | A |
IDRM | pulsed reverse drain current | Tmb = 25 ; pulsed; tp 10 s | - | 81 | A |
Avalanche ruggedness | |||||
WDSS | non-repetitive avalanche energy |
unclamped inductive load; ID = 11 A; VDS 55 V;VGS = 10 V; RGS = 50 ; starting Tj = 25 |
- | 30.3 | mJ |
N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
200 200 ± 20 20 14 80 150 175 |
V V V A A A W |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
Per P-channel | |||||
VDS | drain-source voltage (DC) | - | -30 | V | |
VGS | gate-source voltage (DC) | - | ±20 | V | |
ID | drain current (DC) | Ts = 80 ; note 1 | - | -4 | A |
IDM | peak drain current | note 2 | - | -16 | A |
Ptot | total power dissipation | Ts = 80 ; note 3 | - | 3.5 | W |
Tamb = 25 ; note 4 | - | 2.6 | W | ||
Tamb = 25 ; note 5 | - | 1.1 | W | ||
Tamb = 25 ; note 6 | - | 1.5 | W | ||
Tstg | storage temperature | -65 | +150 | ||
Tj | operating junction temperature | -65 | +150 | ||
Source-drain diode | |||||
IS | source current (DC) | Ts = 80 | - | -2.6 | A |
ISM | peak source current | note 2 | - | -10 | A |