PHP212L, PHP21N06, PHP21N06LT Selling Leads, Datasheet
MFG:NXP Package Cooled:SOP8 D/C:TO
PHP212L, PHP21N06, PHP21N06LT Datasheet download
Part Number: PHP212L
MFG: NXP
Package Cooled: SOP8
D/C: TO
PHP212L, PHP21N06, PHP21N06LT
- Table of contents:
Info of PHP212L
Info of PHP21N06
Info of PHP21N06LT
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About PHP212L
PDF/DataSheet Download
Datasheet: PHP212L
File Size: 63523 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHP21N06
PDF/DataSheet Download
Datasheet: PHP21N06
File Size: 115156 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHP21N06LT
PDF/DataSheet Download
Datasheet: PHP21N06LT
File Size: 115156 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHP212L General Description
Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package.
PHP212L Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| Per P-channel | |||||
| VDS | drain-source voltage (DC) | - | -30 | V | |
| VGS | gate-source voltage (DC) | - | ±12 | V | |
| ID | drain current (DC) | Ts = 80 ; note 1 | - | -4 | A |
| IDM | peak drain current | note 2 | - | -16 | A |
| Ptot | total power dissipation | Ts = 80 ; note 3 | - | 3.5 | W |
| Tamb = 25 ; note 4 | - | 2.6 | W | ||
| Tamb = 25 ; note 5 | - | 1.1 | W | ||
| Tamb = 25 ; note 6 | - | 1.5 | W | ||
| Tstg | storage temperature | -55 | +150 | ||
| Tj | operating junction temperature | -55 | +150 | ||
| Source-drain diode | |||||
| IS | source current (DC) | Ts = 80 | - | -2.6 | A |
| ISM | peak source current | note 2 | - | -10 | A |
PHP212L Features
· High-speed switching
· No secondary breakdown
· Very low on-state resistance
· Low threshold.
· No secondary breakdown
· Very low on-state resistance
· Low threshold.
PHP212L Typical Application
· Motor and actuator driver
· Power management
· Synchronized rectification.
· Power management
· Synchronized rectification.
PHP21N06LT General Description
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology.
PHP21N06LT Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS VGSM ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Pulsed gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 kW Tj 150 Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 |
- - - - - - - - - 55 |
55 55 ± 15 ± 20 19 13 76 56 175 |
V V V V A A A W |
PHP21N06LT Features
• 'Trench' technology
• Low on-state resistance
• Fast switching
• Logic level compatible
• Low on-state resistance
• Fast switching
• Logic level compatible
PHP21N06LT Typical Application
• d.c. to d.c. converters
• switched mode power supplies
• switched mode power supplies
PHP21N06LT Connection Diagram
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