PHP225, PHP23NQ10T, PHP23NQ11T Selling Leads, Datasheet
MFG:NXP Package Cooled:SOP8 D/C:90000
PHP225, PHP23NQ10T, PHP23NQ11T Datasheet download
Part Number: PHP225
MFG: NXP
Package Cooled: SOP8
D/C: 90000
PHP225, PHP23NQ10T, PHP23NQ11T
- Table of contents:
Info of PHP225
Info of PHP23NQ10T
Info of PHP23NQ11T
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About PHP225
PDF/DataSheet Download
Datasheet: PHP225
File Size: 122686 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHP23NQ10T
PDF/DataSheet Download
Datasheet: PHP23NQ10T
File Size: 101756 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHP23NQ11T
PDF/DataSheet Download
Datasheet: PHP23NQ11T
File Size: 92870 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHP225 General Description
Two P-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package.
PHP225 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| Per P-channel | |||||
| VDS | drain-source voltage (DC) | - | -30 | V | |
| VGS | gate-source voltage (DC) | - | ±20 | V | |
| ID | drain current (DC) | Ts = 80 ; note 1 | - | -2.3 | A |
| IDM | peak drain current | note 2 | - | -10 | A |
| Ptot | total power dissipation | Ts = 80 ; note 3 | - | 2 | W |
| Tamb = 25 ; note 4 | - | 2 | W | ||
| Tamb = 25 ; note 5 | - | 1 | W | ||
| Tamb = 25 ; note 6 | - | 1.3 | W | ||
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | - | 150 | ||
| Source-drain diode | |||||
| IS | source current (DC) | Ts = 80 | - | -1.25 | A |
| ISM | peak source current | note 2 | - | -5 | A |
PHP225 Features
· High-speed switching
· No secondary breakdown
· Very low on-resistance.
· No secondary breakdown
· Very low on-resistance.
PHP225 Typical Application
· Motor and actuator driver
· Power management
· Synchronized rectification.
· Power management
· Synchronized rectification.
PHP23NQ10T General Description
N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology.
PHP23NQ10T Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
100 100 ± 20 23 16 92 100 175 |
V V V A A A W |
PHP23NQ10T Features
• 'Trench' technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
• Low on-state resistance
• Fast switching
• Low thermal resistance
PHP23NQ10T Typical Application
• d.c. to d.c. converters
• switched mode power supplies
• T.V. and computer monitor power supplies
• switched mode power supplies
• T.V. and computer monitor power supplies
PHP23NQ10T Connection Diagram
PHP23NQ11T General Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
PHP23NQ11T Features
· Low on-state resistance
· Low thermal resistance
PHP23NQ11T Typical Application
· DC-to-DC converters
· Switched-mode power supplies.
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