PHP28NQ15T, PHP29N08T, PHP2N40 Selling Leads, Datasheet
MFG:NXP Package Cooled:9800 D/C:TO
PHP28NQ15T, PHP29N08T, PHP2N40 Datasheet download
Part Number: PHP28NQ15T
MFG: NXP
Package Cooled: 9800
D/C: TO
PHP28NQ15T, PHP29N08T, PHP2N40
- Table of contents:
Info of PHP28NQ15T
Info of PHP29N08T
Info of PHP2N40
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About PHP101NQ03LT
PDF/DataSheet Download
Datasheet: PHP101NQ03LT
File Size: 285725 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About PHP29N08T
PDF/DataSheet Download
Datasheet: PHP29N08T
File Size: 269246 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHP2N40
PDF/DataSheet Download
Datasheet: PHP2N40
File Size: 59241 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHP29N08T General Description
N-channel standard level field-effect power transistor in a plastic package using TrenchMOS™ technology.
Product availability:
PHP29N08T in SOT78 (TO-220AB)
PHB29N08T in SOT404 (D2-PAK).
Product availability:
PHP29N08T in SOT78 (TO-220AB)
PHB29N08T in SOT404 (D2-PAK).
PHP29N08T Maximum Ratings
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | 25 Tj 175 | - | 75 | V |
| VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 75 | V |
| VGS | gate-source voltage (DC) | - | ±30 | V | |
| ID | drain current (DC) | Tmb = 25 ; VGS = 11 V; Figure 2 and 3 | - | 27 | A |
| Tmb = 100 ; VGS = 11 V; Figure 2 | - | 19.2 | A | ||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 108 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 88 | W |
| Tstg | storage temperature | +175 | |||
| Tj | junction temperature | +175 | |||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tmb = 25 | - | 27 | A |
| ISM | peak source (diode forward) current | Tmb = 25 ; pulsed; tp 10 s | - | 108 | A |
PHP29N08T Features
·High noise immunity
·Low on-state resistance.
·Low on-state resistance.
PHP29N08T Typical Application
·Industrial motor control.
PHP29N08T Connection Diagram
PHP2N40 General Description
N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
PHP2N40 Maximum Ratings
SYMBOL |
PARAMETER | CONDITIONS | MIN. |
MAX. |
UNIT |
ID |
Continuous drain current |
Tmb = 25 ; VGS = 10V |
- |
2.5 1.5 |
A |
IDM |
Pulsed drain current | Tmb = 25 | - |
10 |
A |
PD |
Total dissipation | Tmb = 25 | - |
50 |
W |
PD/Tmb |
Linear derating factor | Tmb > 25 | - |
0.4 |
W/K |
VGS |
Gate-source voltage | - |
± 30 |
V | |
EAS |
Single pulse avalanche energy | VDD 50 V; starting Tj = 25; RGS = 50 ;VGS = 5 V |
- |
100 |
mJ |
IAS |
Peak avalanche current | VDD 50 V; starting Tj = 25; RGS = 50 ;VGS = 5 V |
- |
2.5 |
A |
Tj, Tstg |
Operating junction and storage temperature range | -55 |
150 |
PHP2N40 Typical Application
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
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