PHP2N40E, PHP2N50, PHP2N50E Selling Leads, Datasheet
MFG:PH Package Cooled:09+ D/C:TO
PHP2N40E, PHP2N50, PHP2N50E Datasheet download
Part Number: PHP2N40E
MFG: PH
Package Cooled: 09+
D/C: TO
MFG:PH Package Cooled:09+ D/C:TO
PHP2N40E, PHP2N50, PHP2N50E Datasheet download
MFG: PH
Package Cooled: 09+
D/C: TO
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Datasheet: PHP2N40E
File Size: 21648 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHP2N50
File Size: 58323 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHP2N50E
File Size: 77073 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VDS |
Drain-source voltage |
- |
- |
400 |
V |
VDGR |
Drain-gate voltage |
RGS = 20 W |
- |
400 |
V |
±VGS |
Gate-source voltage |
- |
- |
30 |
V |
ID |
Drain current (DC) |
Tmb = 25 |
- |
2.5 |
A |
IDM |
Drain current (pulse peak value) | Tmb = 25 |
- |
1.6 10 |
A |
IDR |
Source-drain diode current (DC) | Tmb = 25 |
- |
2.5 |
A |
IDRM |
Drain current (pulse peak value) |
Tmb = 100 |
- |
10 |
A |
Ptot |
Total power dissipation |
Tmb = 25 |
- |
50 |
W |
Tstg |
Storage temperature | - |
-55 |
150 |
|
Tj |
Junction temperature |
- |
- |
150 |
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications
SYMBOL |
PARAMETER | CONDITIONS | MIN. |
MAX. |
UNIT |
ID |
Continuous drain current |
Tmb = 25 ; VGS = 10V |
- |
2 1.3 |
A |
IDM |
Pulsed drain current | Tmb = 25 | - |
8 |
A |
PD |
Total dissipation | Tmb = 25 | - |
50 |
W |
PD/Tmb |
Linear derating factor | Tmb > 25 | - |
0.4 |
W/K |
VGS |
Gate-source voltage | - |
± 30 |
V | |
EAS |
Single pulse avalanche energy | VDD 50 V; starting Tj = 25; RGS = 50 ;VGS = 5 V |
- |
100 |
mJ |
IAS |
Peak avalanche current | VDD 50 V; starting Tj = 25; RGS = 50 ;VGS = 5 V |
- |
2 |
A |
Tj, Tstg |
Operating junction and storage temperature range | -55 |
150 |
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
500 500 ± 30 2 1.3 8 50 150 |
V V V A A A W |