PHP3055E, PHP3055L, PHP30NQ15T Selling Leads, Datasheet
MFG:NXP Package Cooled:SOT78/TO-220AB D/C:04
PHP3055E, PHP3055L, PHP30NQ15T Datasheet download
Part Number: PHP3055E
MFG: NXP
Package Cooled: SOT78/TO-220AB
D/C: 04
PHP3055E, PHP3055L, PHP30NQ15T
- Table of contents:
Info of PHP3055E
Info of PHP3055L
Info of PHP30NQ15T
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About PHP3055E
PDF/DataSheet Download
Datasheet: PHP3055E
File Size: 105564 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHP3055L
PDF/DataSheet Download
Datasheet: PHP3055L
File Size: 53486 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHP30NQ15T
PDF/DataSheet Download
Datasheet: PHP30NQ15T
File Size: 100379 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHP3055L General Description
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
PHP3055L Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| ID | Continuous drain current |
Tmb = 25 ; VGS = 10V Tmb = 100 ; VGS = 10 V |
- | 12 9 | A A |
| IDM | Pulsed drain current | Tmb = 25 | - | 48 | A |
| PD | Total dissipation | Tmb = 25 | - | 50 | W |
| PD/Tmb | Linear derating factor | Tmb > 25 | - | 0.33 | W/K |
| VGS | Gate-source voltage | - | ± 15 | V | |
| VGSM | Non-repetitive gate-source voltage | tp 50 s | - | ± 20 | V |
| EAS | Single pulse avalanche energy | VDD 50 V; starting Tj = 25; RGS = 50 ;VGS = 5 V | - | 25 | mJ |
| IAS | Peak avalanche current | VDD 50 V; starting Tj = 25; RGS = 50 ;VGS = 5 V | - | 6 | A |
| Tj, Tstg | Operating junction and storage temperature range | -55 | 175 |
PHP3055L Typical Application
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
PHP30NQ15T General Description
N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
PHP30NQ15T Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
150 150 ± 20 29 20 116 150 175 |
V V V A A A W |
PHP30NQ15T Features
• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
• Very low on-state resistance
• Fast switching
• Low thermal resistance
PHP30NQ15T Connection Diagram
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