PHP33N10, PHP33NQ20T, PHP34NQ10T Selling Leads, Datasheet
MFG:PHI Package Cooled:ph D/C:09+
PHP33N10, PHP33NQ20T, PHP34NQ10T Datasheet download
Part Number: PHP33N10
MFG: PHI
Package Cooled: ph
D/C: 09+
MFG:PHI Package Cooled:ph D/C:09+
PHP33N10, PHP33NQ20T, PHP34NQ10T Datasheet download
MFG: PHI
Package Cooled: ph
D/C: 09+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: PHP33N10
File Size: 74895 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHP33NQ20T
File Size: 86783 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHP34NQ10T
File Size: 118569 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel enhancement mode field-effect power transistor in a plastic envelope featuring stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
SYMBOL |
PARAMETER | CONDITIONS | MIN. |
MAX. |
UNIT |
ID |
Continuous drain current | Tmb = 25 ; VGS = 10V |
- |
34 24 |
A |
IDM |
Pulsed drain current | Tmb = 25 | - |
136 |
A |
PD |
Total dissipation | Tmb = 25 | - |
150 |
W |
PD/Tmb |
Linear derating factor | Tmb > 25 | - |
1.167 |
W/K |
VGS |
Gate-source voltage | - |
± 30 |
V |
|
Tj, Tstg |
Operating junction and storage temperature range | -55 |
175 |
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | 25 Tj 175 | - | 200 | V |
VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 200 | V |
VGS | gate-source voltage (DC) | - | ±20 | V | |
ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 32.7 | A |
Tmb = 100 ; VGS = 10 V; Figure 2 | - | 23.1 | A | ||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 65.4 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 230 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IS | source (diode forward) current (DC) Tmb = 25 | - | 32.7 | A | |
ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 65.4 | A | |
Avalanche ruggedness | |||||
EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 10.4 A; tp = 0.14 ms; VDD 200 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 |
- | 190 | mJ |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
100 100 ± 20 35 25 140 136 175 |
V V V A A A W |