PHP42N03LT, PHP42N03T, PHP44N06LT Selling Leads, Datasheet
MFG:PH Package Cooled:09+ D/C:09+
PHP42N03LT, PHP42N03T, PHP44N06LT Datasheet download
Part Number: PHP42N03LT
MFG: PH
Package Cooled: 09+
D/C: 09+
MFG:PH Package Cooled:09+ D/C:09+
PHP42N03LT, PHP42N03T, PHP44N06LT Datasheet download
MFG: PH
Package Cooled: 09+
D/C: 09+
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PDF/DataSheet Download
Datasheet: PHP42N03LT
File Size: 64765 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHP42N03T
File Size: 61292 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHP44N06LT
File Size: 82808 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 5 V Tmb = 100 ;VGS = 5 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
30 30 ± 15 42 30 168 86 175 |
V V V A A A W |
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Drain-source voltage | - | - | 30 | V |
VDGR | Drain-gate voltage | RGS = 20 k | - | 30 | V |
±VGS | Gate-source voltage | - | - | 20 | V |
ID | Drain current (DC) | Tmb = 25 | - | 42 | A |
ID | Drain current (DC) | Tmb = 100 | - | 33 | A |
IDM | Drain current (pulse peak value) | Tmb = 25 | - | 168 | A |
Ptot | Total power dissipation | Tmb = 25 °C | - | 86 | W |
Tstg, Tj | Storage & operating temperature | - | -55 | 175 |
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
55 55 ± 13 44 31 176 114 175 |
V V V A A A W |