PHP45N03LTA, PHP45N03T, PHP45N0Q10T Selling Leads, Datasheet
MFG:NXP Package Cooled:0209+ D/C:08+/09+
PHP45N03LTA, PHP45N03T, PHP45N0Q10T Datasheet download
Part Number: PHP45N03LTA
MFG: NXP
Package Cooled: 0209+
D/C: 08+/09+
MFG:NXP Package Cooled:0209+ D/C:08+/09+
PHP45N03LTA, PHP45N03T, PHP45N0Q10T Datasheet download
MFG: NXP
Package Cooled: 0209+
D/C: 08+/09+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: PHP45N03LTA
File Size: 305824 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHP45N03T
File Size: 61139 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHP101NQ03LT
File Size: 285725 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | Tj =25 to 175 | - | 25 | V |
VDGR | drain-gate voltage (DC) | Tj =25 to 175 ; RGS = 20 k | - | 25 | V |
VGS | gate-source voltage | - | ±15 | V | |
VGSM | gate-source voltage | TP 50 s; pulsed; duty cycle = 25%;Tj 150 | ±20 | ||
ID | drain current (DC) | Tmb = 25 ; VGS = 5 V; Figure 2 and 3 | - | 40 | A |
Tmb = 100 ; VGS = 5 V; Figure 2 | - | 30 | A | ||
IDM | peak drain current | Tmb = 100 ; pulsed; tp 10 s; Figure 3 | - | 160 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 65 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IS | source (diode forward) current (DC) | Tmb = 25 | - | 40 | A |
ISM | peak source (diode forward) current | Tmb = 25 ; pulsed; tp 10 s | - | 160 | A |
Avalanche ruggedness | |||||
EAS | non-repetitive avalanche energy | unclamped inductive load; ID =40 A; tp = 0.1 ms; VDD 15 V; RGS = 50 ; VGS = 5 V; starting Tj = 25 |
- | 60 | mJ |
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Drain-source voltage | - | - | 55 | V |
VDGR | Drain-gate voltage | RGS = 20 k | - | 55 | V |
±VGS | Gate-source voltage | - | - | 20 | V |
ID | Drain current (DC) | Tmb = 25 | - | 45 | A |
ID | Drain current (DC) | Tmb = 100 | - | 36 | A |
IDM | Drain current (pulse peak value) | Tmb = 25 | - | 180 | A |
Ptot | Total power dissipation | Tmb = 25 | - | 86 | W |
Tstg, Tj | Storage & operating temperature | - | -55 | 175 |
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.