PHP45NQ15T, PHP47NQ10T, PHP4N40E Selling Leads, Datasheet
MFG:NXP Package Cooled:SOT78/TO-220AB D/C:TO
PHP45NQ15T, PHP47NQ10T, PHP4N40E Datasheet download
Part Number: PHP45NQ15T
MFG: NXP
Package Cooled: SOT78/TO-220AB
D/C: TO
MFG:NXP Package Cooled:SOT78/TO-220AB D/C:TO
PHP45NQ15T, PHP47NQ10T, PHP4N40E Datasheet download
MFG: NXP
Package Cooled: SOT78/TO-220AB
D/C: TO
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Datasheet: PHP45NQ15T
File Size: 88905 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHP47NQ10T
File Size: 274102 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHP4N40E
File Size: 80194 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | 25 Tj 175 | - | 150 | V |
VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 150 | V |
VGS | gate-source voltage (DC) | - | ±20 | V | |
ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 45.1 | A |
Tmb = 100 ; VGS = 10 V; Figure 2 | - | 31.9 | A | ||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 90.2 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 230 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IS | source (diode forward) current (DC) Tmb = 25 | - | 45.1 | A | |
ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 90.2 | A | |
Avalanche ruggedness | |||||
EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 19.1A; tp = 0.1 ms; VDD 150 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 |
- | 180 | mJ |
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | Tj =25 to 175 | - |
100 |
V |
VDGR | drain-gate voltage (DC) | Tj =25 to 175 ; RGS = 20 k | - | 100 | V |
VGS | gate-source voltage(DC) | - | ±20 | V | |
ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 47 | A |
Tmb = 100 ; VGS = 10 V; Figure 2 | - | 33 | A | ||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 187 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 166 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | operating junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IS | source (diode forward) current (DC) Tmb = 25 | - | 47 | A | |
ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 187 | A | |
Avalanche ruggedness | |||||
EAS | non-repetitive drain-source avalanche energy |
unclamped inductive load;IAS = 30A; tp = 0.1 ms; VDD 25 V;RGS = 50 VGS = 5 V; starting Tj = 25 Figure 4 |
- | 45 | mJ |
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,
T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching
applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 150 Tj = 25 to 150; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
400 400 ± 30 4.4 2.7 18 83 150 |
V V V A A A W |