PHP4N50E, PHP4N60E, PHP4ND40E Selling Leads, Datasheet
MFG:PH Package Cooled:9800 D/C:TO
PHP4N50E, PHP4N60E, PHP4ND40E Datasheet download
Part Number: PHP4N50E
MFG: PH
Package Cooled: 9800
D/C: TO
PHP4N50E, PHP4N60E, PHP4ND40E
- Table of contents:
Info of PHP4N50E
Info of PHP4N60E
Info of PHP4ND40E
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About PHP4N50E
PDF/DataSheet Download
Datasheet: PHP4N50E
File Size: 21608 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHP4N60E
PDF/DataSheet Download
Datasheet: PHP4N60E
File Size: 82512 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHP4ND40E
PDF/DataSheet Download
Datasheet: PHP4ND40E
File Size: 66708 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHP4N50E General Description
N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
PHP4N50E Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| WDSS | Drain-source non-repetitive unclamped inductive turn-off energy |
ID=1.9A;VDD50V;VGS=10V ; RGS = 50 |
- | 280 | mJ |
| Tj = 25 prior to surge Tj = 100 prior to surge |
- | 44 | mJ | ||
| WDSR 1 |
Drain-source repetitive unclamped inductive turn-off energy |
ID=1.9A;VDD50V;VGS=10V ; RGS = 50;Tj150 |
- | 7.4 | mJ |
PHP4N50E Typical Application
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
PHP4N60E General Description
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
PHP4N60E Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 150 Tj = 25 to 150; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
600 600 ± 30 4.5 2.9 18 125 150 |
V V V A A A W |
PHP4N60E Features
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
PHP4N60E Connection Diagram
PHP4ND40E General Description
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge ansd full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits.
PHP4ND40E Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS | Drain-source voltage | Tj =25 to 175 | - | 400 | V |
| VDGR | Drain-gate voltage | Tj =25 to 175 ; RGS = 20 k | - | 400 | V |
| VGS | Gate-source voltage | -- | ±30 | V | |
| ID | Continuous drain current | Tmb = 25 ;VGS = 10 V | 4.4 | A | |
| Tmb = 100 ;VGS = 10 V | - | 2.7 | A | ||
| IDM | Pulsed drain current | Tmb = 25 | - | 18 | A |
| PD | Total power dissipation | Tmb = 25 | - | 83 | W |
| Tj, Tstg | Operating junction and storage temperature |
-55 | 150 |
PHP4ND40E Features
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Fast reverse recovery diode
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Fast reverse recovery diode
PHP4ND40E Connection Diagram
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