PHP50N03LT, PHP50N03T, PHP50N06 Selling Leads, Datasheet
MFG:TO-220 Package Cooled:PH D/C:09+
PHP50N03LT, PHP50N03T, PHP50N06 Datasheet download
Part Number: PHP50N03LT
MFG: TO-220
Package Cooled: PH
D/C: 09+
MFG:TO-220 Package Cooled:PH D/C:09+
PHP50N03LT, PHP50N03T, PHP50N06 Datasheet download
MFG: TO-220
Package Cooled: PH
D/C: 09+
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Datasheet: PHP50N03LT
File Size: 111371 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHP50N03T
File Size: 60915 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHP50N06
File Size: 55740 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS VGSM ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage (DC) Gate-source voltage (pulse peak value) Drain current (DC) Drain current (pulse peak value) Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 kW Tj 150 Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 |
- - - - - - - - - 55 |
25 25 ± 15 ± 20 48 34 180 86 175 |
V V V V A A A W |
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Drain-source voltage | - | - | 30 | V |
VDGR | Drain-gate voltage | RGS = 20 kW | - | 30 | V |
±VGS | Gate-source voltage | - | - | 20 | V |
ID | Drain current (DC) | Tsp = 25 °C | - | 50 | A |
ID | Drain current (DC) | Tsp = 100 °C | - | 29 | A |
IDM | Drain current (pulse peak value) | Tsp = 25 °C | - | 200 | A |
Ptot | Total power dissipation | Tsp = 25 °C | - | 94 | W |
Tstg, Tj | Storage & operating temperature | - | -55 | 175 | °C |
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
N-channel enhancement mode field-effect power transistor in a plastic envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general resistance purpose switching applications.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VDS |
Drain-source voltage |
- |
- |
60 |
V |
VDGR |
Drain-gate voltage |
RGS = 20 W |
- |
60 |
V |
±VGS |
Gate-source voltage |
- |
- |
30 |
V |
ID |
Drain current (DC) |
Tmb = 25 |
- |
52 |
A |
ID |
Drain current (DC) | Tmb = 25 |
- |
36 |
A |
IDM |
Drain current (pulse peak value) |
Tmb = 100 |
- |
208 |
A |
Ptot |
Total power dissipation |
Tmb = 25 |
- |
150 |
W |
Tstg |
Storage temperature | - |
-55 |
175 |
|
Tj |
Junction temperature |
- |
- |
175 |
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.