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PHP55N03LT, PHP55N03LTA, PHP55N03T

Table of contents:
Info of PHP55N03LT
Info of PHP55N03LTA
Info of PHP55N03T

PHP55N03LT, PHP55N03LTA, PHP55N03T Selling Leads, Datasheet

MFG:PH Package Cooled:09+ D/C:TO

PHP55N03LT, PHP55N03LTA, PHP55N03T Picture

PHP55N03LT, PHP55N03LTA, PHP55N03T Datasheet download

Five Points

Part Number: PHP55N03LT

MFG: PH

Package Cooled: 09+

D/C: TO

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PHP55N03LT General Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology.

PHP55N03LT Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DSSV_DGR V_GS V_GSMI_D I_DM P_totT_j, T_stg	Drain-source voltage Drain-gate voltage Gate-source voltage (DC) Gate-source voltage (pulse peak value) Drain current (DC) Drain current (pulse peak value) Total power dissipation Operating junction and storage temperature	T_j = 25 to 175 T_j= 25 to 175; R_GS= 20 kW T_j 150 T_mb = 25 T_mb = 100 T_mb = 25 T_mb = 25	- - - - - - - - - 55	25 25 ± 15 ± 20 55 38 220 103 175	V V V V A A A W

PHP55N03LT Features

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
• Logic level compatible

PHP55N03LT Typical Application

• High frequency computer motherboard d.c. to d.c. converters
• High current switching

PHP55N03LT Connection Diagram

PHP55N03LTA General Description

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology.

Product availability:

PHP55N03LTA in a SOT78 (TO-220AB)

PHB55N03LTA in a SOT404 (D2-PAK)

PHD55N03LTA in a SOT428 (D-PAK).

PHP55N03LTA Maximum Ratings

Symbol	Parameter	Conditions	Min	Max	Unit
V_DS	drain-source voltage (DC)	T_j =25 to 175	-	25	V
V_DGR	drain-gate voltage (DC)	T_j =25 to 175 ; R_GS = 20 k	-	25	V
V_GS	gate-source voltage		-	±15	V
VGSM	peak gate-source voltage	T_P 50 s; pulsed; duty cycle = 25% Tj 150		±20
I_D	drain current (DC)	T_mb = 25 ; V_GS = 5 V; Figure 2 and 3	-	55	A
I_D	drain current (DC)	T_mb = 100 ; V_GS = 5 V; Figure 2	-	38	A
I_DM	peak drain current	T_mb = 25 ; pulsed; t_p 10 s; Figure 3	-	220	A
P_tot	total power dissipation	T_mb = 25 ; Figure 1	-	85	W
T_stg	storage temperature		-55	+175
T_j	operating junction temperature		-55	+175
Source-drain diode
I_S	source (diode forward) current (DC)	T_mb = 25	-	55	A
I_SM	peak source (diode forward) current	T_mb = 25 ; pulsed; tp 10 s	-	220	A
Avalanche ruggedness
E_AS	non-repetitive avalanche energy	unclamped inductive load; I_D =55 A; t_p = 0.1 ms; V_DD 15 V; R_GS = 50 ; V_GS = 5 V; starting Tj = 25	-	60	mJ
I_AS	non-repetitive avalanche current	unclamped inductive load; V_DD 15 V; R_GS = 50 ;V_GS = 5 V;starting Tj = 25	-	55	A

PHP55N03LTA Features

·Low on-state resistance
·Fast switching.

PHP55N03LTA Typical Application

·Computer motherboard high frequency DC to DC converters.

PHP55N03LTA Connection Diagram

PHP55N03T General Description

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.

PHP55N03T Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS	Drain-source voltage	-	-	55	V
V_DGR	Drain-gate voltage	R_GS = 20 k	-	55	V
±V_GS	Gate-source voltage	-	-	20	V
I_D	Drain current (DC)	T_mb = 25	-	55	A
I_D	Drain current (DC)	T_mb = 100	-	38	A
ID_M	Drain current (pulse peak value)	T_mb = 25	-	220	A
P_tot	Total power dissipation	T_mb = 25	-	103	W
T_stg, T_j	Storage & operating temperature	-	-55	175

PHP55N03T Typical Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

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