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PHP55N04LT, PHP5N20, PHP5N20E

Table of contents:
Info of PHP55N04LT
Info of PHP5N20
Info of PHP5N20E

PHP55N04LT, PHP5N20, PHP5N20E Selling Leads, Datasheet

MFG:TO-220 Package Cooled:PH D/C:01+

PHP55N04LT, PHP5N20, PHP5N20E Datasheet download

Five Points

Part Number: PHP55N04LT

MFG: TO-220

Package Cooled: PH

D/C: 01+

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PHP55N04LT General Description

The PHP55N04LT is designed as N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology. Typical applications include high frequency computer motherboard DC to DC converters and high current switching.

It has five features. The first one is 'Trench' technology. The second one is it would have very low on-state resistance. The third one is it would have fast switching. The fourth one is it has low thermal resistance. The fifth one is logic level compatible. That are all the main features.

Some limiting values have been concluded into several points as follow. The first one is about its drain-source voltage which would be max 35V. The second one is about its drain-gate voltage which would be max 35V. The third one is about its gate-source voltage (DC) which would be max ±15V. The fourth one is about its gate-source voltage (pulse peak value) which would be max ±20V. The fifth one is about its drain current (DC) which would be 55A at 25°C and would be max 38A at 100°C. The sixth one is about its drain current (pulse peak value) which would be max 220A. The seventh one is about its total power dissipation which would be max 103W. The eighth one is about its operating junction and storage temperature which would be from -55 to 175°C.

Also some electrical characteristics about it. The first one is about its drain-source breakdown voltage which would be min 35V. The second one is about its gate threshold voltage which would be min 1V and typ 1.5V and max 2V. The third one is about its drain-source on-state resistance which would be typ 11m and max 14m with condition of Vgs=10V and Id=25A. The fourth one is about its forward transconductance which would be min 10S and typ 28S. The fifth one is about its gate source leakage current which would be typ 10nA and max 100nA. The sixth one is about its zero gate voltage drain current which would be typ 0.05A and max 10A. And so on. For more information please contact us.

PHP55N04LT Maximum Ratings

PHP55N04LT Features

PHP5N20E General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.

PHP5N20E Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
I_D	Continuous drain current	T_mb = 25 ; V_GS = 10V T_mb = 100 ; V_GS = 10 V	-	5 3.5	A
I_DM	Pulsed drain current	T_mb = 25	-	20	A
P_D	Total dissipation	T_mb = 25	-	60	W
P_D/T_mb	Linear derating factor	T_mb > 25	-	0.4	W/K
V_GS	Gate-source voltage		-	± 30	V
E_AS	Single pulse avalanche energy	V_DD 50 V; starting T_j = 25; R_GS = 50 ;V_GS = 5 V	-	5	mJ
I_AS	Peak avalanche current	V_DD 50 V; starting T_j = 25; R_GS = 50 ;V_GS = 5 V	-	5	A
T_j, T_stg	Operating junction and storage temperature range		-55	175

PHP5N20E Typical Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

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