PHP60N06T, PHP63NQ03LT, PHP65N06LT Selling Leads, Datasheet
MFG:PH Package Cooled:09+ D/C:dc01
PHP60N06T, PHP63NQ03LT, PHP65N06LT Datasheet download
Part Number: PHP60N06T
MFG: PH
Package Cooled: 09+
D/C: dc01
PHP60N06T, PHP63NQ03LT, PHP65N06LT
- Table of contents:
Info of PHP60N06T
Info of PHP63NQ03LT
Info of PHP65N06LT
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About PHP60N06T
PDF/DataSheet Download
Datasheet: PHP60N06T
File Size: 65869 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHP63NQ03LT
PDF/DataSheet Download
Datasheet: PHP63NQ03LT
File Size: 106783 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHP65N06LT
PDF/DataSheet Download
Datasheet: PHP65N06LT
File Size: 73180 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHP60N06T General Description
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
PHP60N06T Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | Drain-source voltage | - | - | 55 | V |
| VDGR | Drain-gate voltage | RGS = 20 k | - | 55 | V |
| ±VGS | Gate-source voltage | - | - | 20 | V |
| ID | Drain current (DC) | Tmb = 25 | - | 58 | A |
| ID | Drain current (DC) | Tmb = 100 | - | 40 | A |
| IDM | Drain current (pulse peak value) | Tmb = 25 | - | 232 | A |
| Ptot | Total power dissipation | Tmb = 25 | - | 150 | W |
| Tstg, Tj | Storage & operating temperature | - | -55 | 175 |
PHP60N06T Typical Application
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
PHP65N06LT General Description
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHP65N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB65N06LT is supplied in the SOT404 surface mounting package.
PHP65N06LT Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS | Drain-source voltage | Tj =25 to 175 | - | 55 | V |
| VDGR | Drain-gate voltage | Tj =25 to 175 ; RGS = 20 k | - | 55 | V |
| VGS | Gate-source voltage | -- | ±13 | V | |
| ID | Continuous drain current | Tmb = 25 | 63 | A | |
| Tmb = 100 | - | 44 | A | ||
| IDM | Pulsed drain current | Tmb = 25 | - | 240 | A |
| PD | Total power dissipation | Tmb = 25 | - | 150 | W |
| Tj, Tstg | Operating junction and storage temperature |
-55 | 175 |
PHP65N06LT Features
• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
PHP65N06LT Connection Diagram
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