PHP7N60E, PHP80N06LT, PHP80N06T Selling Leads, Datasheet
MFG:PH Package Cooled:09+ D/C:TO
PHP7N60E, PHP80N06LT, PHP80N06T Datasheet download
Part Number: PHP7N60E
MFG: PH
Package Cooled: 09+
D/C: TO
MFG:PH Package Cooled:09+ D/C:TO
PHP7N60E, PHP80N06LT, PHP80N06T Datasheet download
MFG: PH
Package Cooled: 09+
D/C: TO
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Datasheet: PHP7N60E
File Size: 93849 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHP80N06LT
File Size: 74413 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHP80N06T
File Size: 67754 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 150 Tj = 25 to 150; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
600 600 ± 30 7 4.5 28 147 150 |
V V V A A A W |
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHP80N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB80N06LT is supplied in the SOT404 surface mounting package.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS | Drain-source voltage | Tj =25 to 175 | - | 55 | V |
VDGR | Drain-gate voltage | Tj =25 to 175 ; RGS = 20 k | - | 55 | V |
VGS | Gate-source voltage | -- | ±13 | V | |
ID | Continuous drain current | Tmb = 25 | 75 | A | |
Tmb = 100 | - | 56 | A | ||
IDM | Pulsed drain current | Tmb = 25 | - | 240 | A |
PD | Total power dissipation | Tmb = 25 | - | 178 | W |
Tj, Tstg | Operating junction and storage temperature |
-55 | 175 |
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Drain-source voltage | - | - | 55 | V |
VDGR | Drain-gate voltage | RGS = 20 k | - | 55 | V |
±VGS | Gate-source voltage | - | - | 20 | V |
ID | Drain current (DC)1 | Tmb = 25 °C | - | 75 | A |
ID | Drain current (DC) | Tmb = 25 °C | - | 56 | A |
IDM | Drain current (pulse peak value) | Tmb = 25 °C | - | 240 | A |
Ptot | Total power dissipation | Tmb = 25 °C | - | 178 | W |
Tstg, Tj | Storage & operating temperature | - | -55 | 175 | °C |
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.