PHP95N03LT, PHP96NQ03CT, PHP96NQ03LT Selling Leads, Datasheet
MFG:PH Package Cooled:09+ D/C:TO
PHP95N03LT, PHP96NQ03CT, PHP96NQ03LT Datasheet download
Part Number: PHP95N03LT
MFG: PH
Package Cooled: 09+
D/C: TO
MFG:PH Package Cooled:09+ D/C:TO
PHP95N03LT, PHP96NQ03CT, PHP96NQ03LT Datasheet download
MFG: PH
Package Cooled: 09+
D/C: TO
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Datasheet: PHP95N03LT
File Size: 312000 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHP101NQ03LT
File Size: 285725 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHP96NQ03LT
File Size: 300251 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | Tj =25 to 175 | - | 25 | V |
VDGR | drain-gate voltage (DC) | Tj =25 to 175 ; RGS = 20 k | - | 25 | V |
VGS | gate-source voltage(DC) | - | ±15 | V | |
VGSM | gate-source voltage | TP 50 s; pulsed; duty cycle = 25%;Tj 150 | ±20 | ||
ID | drain current (DC) | Tmb = 25 ; VGS = 5 V; Figure 2 and 3 | - | 75 | A |
Tmb = 100 ; VGS = 5 V; Figure 2 | - | 61 | A | ||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 240 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 125 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | operating junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IS | source (diode forward) current (DC) | Tmb = 25 | - | 75 | A |
ISM | peak source (diode forward) current | Tmb = 25 ; pulsed; tp 10 s | - | 240 | A |
Avalanche ruggedness | |||||
EAS | non-repetitive avalanche energy | unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDD 15 V; RGS = 50 ; VGS = 5 V; starting Tj = 25 |
- | 120 | mJ |
IAS | non-repetitive avalanche current | unclamped inductive load; VDD 15 V; RGS = 50 ; VGS = 5 V; starting Tj = 25 |
- | 75 | A |
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | Tj =25 to 175 | - | 25 | V |
VDGR | drain-gate voltage (DC) | Tj =25 to 175 ; RGS = 20 k | - | 25 | V |
VGS | gate-source voltage | - | ±15 | V | |
VGSM | gate-source voltage | TP 50 s; pulsed; duty cycle = 25%;Tj 150 | ±20 | ||
ID | drain current (DC) | Tmb = 25 ; VGS = 5 V; Figure 2 and 3 | - | 75 | A |
Tmb = 100 ; VGS = 5 V; Figure 2 | - | 65 | |||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 240 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 115 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IS | source (diode forward) current (DC) | Tmb = 25 | - | 75 | A |
ISM | peak source (diode forward) current | Tmb = 25 ; pulsed; tp 10 s | - |
240 |
A |