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PHT6N03LT, PHT6N03T, PHT6N06LT

PHT6N03LT, PHT6N03T, PHT6N06LT Selling Leads, Datasheet

MFG:PHILIPS  Package Cooled:223  D/C:06+

PHT6N03LT, PHT6N03T, PHT6N06LT Picture

PHT6N03LT, PHT6N03T, PHT6N06LT Datasheet download

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Part Number: PHT6N03LT

 

MFG: PHILIPS

Package Cooled: 223

D/C: 06+

 

 

 
 
 
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About PHT6N03LT

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Datasheet: PHT6N03LT

File Size: 54442 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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Datasheet: PHT6N03T

File Size: 71990 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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  • PHT6N06LT

  • Vendor: PHILIPS Pack: SOT D/C: 05+& Qty: 4000  Adddate: 2026-04-20
  • Inquire Now
  • Aolun Electronic co ltd   Taiwan
    Contact: Ms.Ritaho   MSN:Ao.lun@hotmail.com
    Tel: 86-755-61358797
    Fax: 86-755-61327687
    (56)

About PHT6N06LT

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Datasheet: PHT6N06LT

File Size: 69241 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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PHT6N03LT General Description

N-channel enhancement mode logic level field-effect power transistor using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dcconverters and general purpose switching applications.

The PHT6N03LT is supplied in the SOT223 surface mounting package.

PHT6N03LT Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage Tj = 25 °C to 150°C - 30 V
VDGR Drain-gate voltage Tj = 25 °C to 150°C; RGS = 20 k - 30 V
VGS Gate-source voltage   - ±13 V
ID Continuous drain current Tamb = 25 °C; VGS = 10 V Tamb = 100 °C; VGS = 10 V - 5.9 4.1 A A
IDM Pulsed drain current Tamb = 25 °C - 23.6 A
PD Total power dissipation Tamb = 25 °C - 1.8 W
Tstg, Tj Operating junction and storage temperature - -55 150 °C

PHT6N03LT Features

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Surface mounting package

PHT6N03T General Description

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology, the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is  intended for use in DC-DC converters and general purpose switching applications.

PHT6N03T Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 30 V
VDGR Drain-gate voltage RGS = 20 kW - 30 V
±VGS Gate-source voltage - - 16 V
ID Drain current (DC) Tsp = 25 °C Tamb = 25 °C - 12.8 5.9 A A
ID Drain current (DC) Tsp = 100 °C Tamb = 100 °C - 9 4.1 A A
IDM Drain current (pulse peak value) Tsp = 25 °C Tamb = 25 °C - 51.2 23.6 A A
Ptot Total power dissipation Tsp = 25 °C Tamb = 25 °C - 8.3 1.8 W W
Tstg, Tj Storage & operating temperature - -55 150 °C

PHT6N03T Typical Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

PHT6N06LT General Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC-DC converters and general purpose switching
applications.

PHT6N06LT Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 55 V
VDGR Drain-gate voltage RGS = 20 k - 55 V
VGS Gate-source voltage - - ±13 V
ID Drain current (DC) Tsp = 25 °C Tamb = 25 °C - 5.5 2.5 A A
ID Drain current (DC) Tsp = 100 °C Tamb = 100°C - 3.8 1.75 A A
IDM Drain current (pulse peak value) Tsp = 25 °C Tamb = 25 °C - 22 10 A A
Ptot Total power dissipation Tsp = 25 °C Tamb = 25 °C - 8.3 1.8 W W
Tstg, Tj Storage & operating temperature - -55 150 °C

PHT6N06LT Typical Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

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