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PHT1008, PHT11N06T, PHT12000WAH

Table of contents:
Info of PHT1008
Info of PHT11N06T
Info of PHT12000WAH

PHT1008, PHT11N06T, PHT12000WAH Selling Leads, Datasheet

Package Cooled:SMD D/C:05+

PHT1008, PHT11N06T, PHT12000WAH Datasheet download

Five Points

Part Number: PHT1008

MFG: --

Package Cooled: SMD

D/C: 05+

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PHT11N06T General Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC-DC converters and general purpose switching applications.

PHT11N06T Maximum Ratings

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_DGR

±V_GS

I_D

I_DM

P_tot

T_stg, T_j

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current (DC)

Drain current (pulse peak value)

Total power dissipation

Storage & operating temperature

R_GS = 20 kW

T_sp= 25 °C

T_amb = 25 °C

T_sp = 100 °C

T_amb = 100 °C

T_sp = 25 °C

T_amb = 25 °C

T_sp = 25 °C

T_amb = 25 °C

-55

10.7

4.9

7.5

3.4

8.3

1.8

150

PHT11N06T Typical Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

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