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PHT6N06T 135, PHT6N06T/T3, PHT6N10T

PHT6N06T 135, PHT6N06T/T3, PHT6N10T Selling Leads, Datasheet

MFG:NXP  D/C:09+

PHT6N06T 135, PHT6N06T/T3, PHT6N10T Picture

PHT6N06T 135, PHT6N06T/T3, PHT6N10T Datasheet download

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Part Number: PHT6N06T 135

 

MFG: NXP

Package Cooled:

D/C: 09+

 

 

 
 
 
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About PHT11N06

PDF/DataSheet Download

Datasheet: PHT11N06

File Size: 77156 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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About PHT6N06T/T3

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Datasheet: PHT6N06T/T3

File Size: 73006 KB

Manufacturer: Philips Semiconductors

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PHT6N10T Suppliers

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About PHT6N10T

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Datasheet: PHT6N10T

File Size: 182383 KB

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PHT6N10T General Description

N-channel enchancement mode field-effect power transistor in a plastic envelope using"trench" technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.It has six unique features: the first one is "Trench" technology. The second one is low on-state resistance. The third one is fast switching. The forth one is stable off-state charactersitics. The fifth one is high thermal cycling performance. The sixth one is low thermal resistance.

There are some limiting values(limiting values in accordance with the absolute maximum system).Drain-source voltage(VDSS) is 100 V max when Tj is 25 to 175.Drain-gate voltage(VDGR) is 100 V when Tj is 25 to 175,RGS is 20 k. Gate-source voltage is ±20 V. Continuous drian current(DC)(ID) is 6 A when Tsp is 25 or is 3.8 A when Tsp is 100.Drain current(pulse peak value)(IDM) is 24 A when Tsp is 25.Total power dissipation(Ptot) is 8.3 W when Tsp is 25. Junction temperature(Tj) is 150.Otherwise, there are also some thermal resistances about it.Thermal resistance junction to solder point is 12 k/W typ and 15 k/W max. Thermal resistance junction to ambient is 70 K/W typ (pcb mounted;minimum footprint).Electrical characteristics: Drain-source breakdwon voltage(V(BR)DSS ) is 100 V min when VGS is 0V, ID is 0.25 mA. Gate threshold voltage (VGS(TO) ) is 2.0 Vmin,3.0 V typ and 4.0 V max when VDS is VGS, ID is 1 mA. Drain-source leakage current(IDSS) is 1uA typ and 25 uA max when VDS is 100 V , VGS is 0 V.Gate-source leakage current(IGSS) is 10 nA typ and 100 nA max when VGS is ±10 V,VDS is 0 V.Drain-source on-state resistance(RDS(ON) ) is 90 mtyp and 100 m max when VGS is 10 V ,Tj is 150, ID is 3 A. Total gate charge is 20 nC typ and 26 nC max when VDD is 80 V , VGS is 10 V,ID is 6 A .Gate to source charge is 3 nC typ and 5 nC max when  VDD is 80 V , VGS is 10 V,ID is 6 A .

Well, this is a simple introduction to this type of product, if you want to know more about it, please pay more attention to our web. Thanks for your attention!

 



PHT6N10T Maximum Ratings



PHT6N10T Features



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