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PHW1915, PHW20N50E, PHW35NQ20T

PHW1915, PHW20N50E, PHW35NQ20T Selling Leads, Datasheet

MFG:MOTOROLA  Package Cooled:09+  D/C:N/A

PHW1915, PHW20N50E, PHW35NQ20T Picture

PHW1915, PHW20N50E, PHW35NQ20T Datasheet download

Five Points

Part Number: PHW1915

 

MFG: MOTOROLA

Package Cooled: 09+

D/C: N/A

 

 

 
 
 
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About PHW11N50E

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Datasheet: PHW11N50E

File Size: 42621 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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About PHW20N50E

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Datasheet: PHW20N50E

File Size: 95589 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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About PHW35NQ20T

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Datasheet: PHW35NQ20T

File Size: 95643 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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PHW20N50E General Description

N-channel, enhancement mode  field-effect power transistor,intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose  switching applications.

The PHW20N50E is supplied in the SOT429 (TO247) conventional leaded package.

PHW20N50E Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage Tj = 25   to 150 - 500 V
VDGR Drain-gate voltage Tj = 25   to 150 ; RGS = 20 kW - 500 V
VGS Gate-source voltage   - ± 30 V
ID Continuous drain current

Tmb = 25 ; VGS = 10 V Tmb = 100 ; VGS = 10 V

- 20 12.4 A
IDM Pulsed drain current Tmb = 25 - 80 A
PD Total dissipation Tmb = 25 - 250 w
Tstg, Tj Operating junction and storage temperature range   -55 150

PHW20N50E Features

• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance

PHW20N50E Typical Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

PHW35NQ20T General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench'technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.

The PHW35NQ20T is supplied in the SOT429 (TO247) conventional leaded package.

PHW35NQ20T Features

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance

PHW35NQ20T Typical Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

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