PM45302C, PM45302F, PM45502C Selling Leads, Datasheet
MFG:HITACHI Package Cooled:04+ D/C:2MOS
PM45302C, PM45302F, PM45502C Datasheet download
Part Number: PM45302C
MFG: HITACHI
Package Cooled: 04+
D/C: 2MOS
PM45302C, PM45302F, PM45502C
- Table of contents:
Info of PM45302C
Info of PM45302F
Info of PM45502C
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About PM400DAS060
PDF/DataSheet Download
Datasheet: PM400DAS060
File Size: 947699 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
About Pm45302f
PDF/DataSheet Download
Datasheet: Pm45302f
File Size: 61839 KB
Manufacturer: hitachi
Download : Click here to Download
About PM45502C
PDF/DataSheet Download
Datasheet: PM45502C
File Size: 51704 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
PM45302F Maximum Ratings
|
Item |
Symbol |
Rating |
Unit |
| Drain source voltage |
V(BR)DSS |
450 |
V |
| Gate source voltage |
V(BR)GSS |
±20 |
V |
| Drain current |
ID |
30 |
A |
| Drain peak current |
ID(peak) |
60 |
A |
| Body to drain diode reverse drain current |
IDR |
30 |
A |
| Body to drain diode reverse peak current |
IDR(peak) |
60 |
A |
| Channel dissipation |
Pch*1 |
200 |
W |
| Channel temperature |
Tch |
150 |
|
| Storage temperature |
Tstg |
45 to +125 |
|
| Insulation dielectric |
Viso*2 |
2000 |
V |
Notes:
1. Value at Tc = 25
2. Base to terminals AC 1 minute
PM45302F Features
· Equipped with Power MOS FET
· Low on-resistance
· High speed switching
· Low drive current
· Wide area of safe operation
· Inherent parallel diode between source and drain
· Isolated base from Terminal
· Suitable for motor driver, switching regulator and etc.
PM45302F Typical Application
· High Speed Power Switching
PM45502C Maximum Ratings
| Item | Symbol | Rating | Unit |
| Drain source voltage | VDSS | 450 | V |
| Gate source voltage | VGSS | ±20 | V |
| Drain current | ID | 50 | A |
| Drain peak current | ID(peak) | 100 | A |
| Body to drain diode reverse drain current | IDR | 50 | A |
| Body to drain diode reverse drain peak current | IDR(peak) | 100 | A |
| Channel dissipation | Pch*1 | 300 | W |
| Channel temperature | Tch | 150 | °C |
| Storage temperature | Tstg | 45 to +125 | °C |
| Insulation dielectric | Visol*2 | 2000 | V |
2. Base to terminals AC minute
PM45502C Features
· Equipped with Power MOS FET
· Low on-resistance
· High speed switching
· Low drive current
· Wide area of safe operation
· Inherent parallel diode between source and drain
· Isolated base from Terminal
· Suitable for motor driver, switching regulator and etc.
· Low on-resistance
· High speed switching
· Low drive current
· Wide area of safe operation
· Inherent parallel diode between source and drain
· Isolated base from Terminal
· Suitable for motor driver, switching regulator and etc.
PM45502C Typical Application
·High Speed Power Switching
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