PSMN040-200W, PSMN057-200B, PSMN057-200P Selling Leads, Datasheet
MFG:PHM Package Cooled:TO220 D/C:7
PSMN040-200W, PSMN057-200B, PSMN057-200P Datasheet download
Part Number: PSMN040-200W
MFG: PHM
Package Cooled: TO220
D/C: 7
MFG:PHM Package Cooled:TO220 D/C:7
PSMN040-200W, PSMN057-200B, PSMN057-200P Datasheet download
MFG: PHM
Package Cooled: TO220
D/C: 7
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PDF/DataSheet Download
Datasheet: PSMN040-200W
File Size: 88245 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PSMN057-200B
File Size: 100414 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PSMN057-200P
File Size: 94985 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating.
SYMBOL |
PARAMETER | CONDITIONS |
MIN. |
MAX. |
UNIT |
VDSS |
Drain-source voltage | Tj = 25 to 175 |
- |
200 |
V |
VDGR |
Drain-gate voltage | Tj = 25 to 175; RGS = 20 k |
- |
200 |
V |
VGS |
Gate-source voltage |
- |
± 20 |
V | |
ID |
Continuous drain current | Tmb = 25 |
- |
50 |
A |
Tmb = 100 |
- |
36 |
A | ||
IDM |
Pulsed drain current | Tmb = 25 |
- |
200 |
A |
PD |
Total power dissipation | Tmb = 25 |
- |
300 |
W |
Tj, Tstg |
Operating junction andstorage temperature |
-55 |
175 |
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
SYMBOL |
PARAMETER | CONDITIONS |
MIN. |
MAX. |
UNIT |
VDSS |
Drain-source voltage | Tj = 25 to 175 |
- |
200 |
V |
VDGR |
Drain-gate voltage | Tj = 25 to 175; RGS = 20 k |
- |
200 |
V |
VGS |
Gate-source voltage |
- |
± 20 |
V | |
ID |
Continuous drain current | Tmb = 25 |
- |
39 |
A |
Tmb = 100 |
- |
27.5 |
A | ||
IDM |
Pulsed drain current | Tmb = 25 |
- |
156 |
A |
PD |
Total power dissipation | Tmb = 25 |
- |
250 |
W |
Tj, Tstg |
Operating junction andstorage temperature |
-55 |
175 |
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
SYMBOL |
PARAMETER | CONDITIONS |
MIN. |
MAX. |
UNIT |
VDSS |
Drain-source voltage | Tj = 25 to 175 |
- |
200 |
V |
VDGR |
Drain-gate voltage | Tj = 25 to 175; RGS = 20 k |
- |
200 |
V |
VGS |
Gate-source voltage |
- |
± 20 |
V | |
ID |
Continuous drain current | Tmb = 25 |
- |
39 |
A |
Tmb = 100 |
- |
27.5 |
A | ||
IDM |
Pulsed drain current | Tmb = 25 |
- |
156 |
A |
PD |
Total power dissipation | Tmb = 25 |
- |
250 |
W |
Tj, Tstg |
Operating junction andstorage temperature |
-55 |
175 |