RA60H1317M1A, RA60H4047M, RA60H4047M1 Selling Leads, Datasheet
Package Cooled:Module D/C:07+
RA60H1317M1A, RA60H4047M, RA60H4047M1 Datasheet download
Part Number: RA60H1317M1A
MFG: --
Package Cooled: Module
D/C: 07+
RA60H1317M1A, RA60H4047M, RA60H4047M1
- Table of contents:
Info of RA60H1317M1A
Info of RA60H4047M
Info of RA60H4047M1
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About RA60H1317M
PDF/DataSheet Download
Datasheet: RA60H1317M
File Size: 59926 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
About RA60H4047M1-101
PDF/DataSheet Download
Datasheet: RA60H4047M1-101
File Size: 173513 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
About RA60H4047M1-101
PDF/DataSheet Download
Datasheet: RA60H4047M1-101
File Size: 173513 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
RA60H4047M1 Maximum Ratings
|
SYMBOL |
PARAMETER | CONDITIONS |
RATING |
UNIT |
|
VDD |
Drain Voltage | VGG<5V, Pin=0W |
17 |
V |
|
VGG |
Gate Voltage | VDD<12.5V, Pin=50mW |
6 |
V |
|
Pin |
Input Power | f=400-470MHz, VGG<5V |
100 |
mW |
|
Pout |
Output Power |
80 |
W | |
|
Tcase(OP) |
Operation Case Temperature Range |
-30 to +100 |
°C | |
|
Tstg |
Storage Temperature Range |
-40 to +110 |
°C |
RA60H4047M1 Features
• Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)
• Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
• Metal shield structure that makes the improvements of spurious radiation simple
• Low-Power Control Current IGG=5mA (typ) @ VGG=5V
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.
• Pout>60W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
• Metal shield structure that makes the improvements of spurious radiation simple
• Low-Power Control Current IGG=5mA (typ) @ VGG=5V
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.
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