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The RC4558 integrated circuit is a dual high-gain operational amplifier internally compensated and constructed on a single silicon IC using an advanced epitaxial process.
Combining the features of the 741 with the close parameter matching and tracking of a dual device on a monolithic chip results in unique performance characteristics. Excellent channel separation allows the use of this dual device in dense single 741 operational amplifier applications. It is especially well suited for applications in differential-in, differential-out as well as in potentiometric amplifiers and where gain and phase matched channels are mandatory.
RC4558 Maximum Ratings
Parameter
Min
Typ
Max
Units
Supply Voltage
RM4558
±22
V
RC4558
±18
Input Voltage2
±15
V
Differential Input Voltage
30
V
PDTA < 50
SOIC
300
mW
PDIP
468
CerDIP
833
TO-99
658
Junction Temperature
SOIC, PDIP
125
CerDIP, TO-99
175
Operating Temperature
RM4558
-55
125
RC4558
0
70
Lead Soldering Temperature
PDIP, CerDIP, TO-99 (60 sec)
300
SOIC (10 sec)
260
Output Short Circuit Duration3
Indefinite
RC4558 Features
• 2.5 MHz unity gain bandwidth • Supply voltage ±22V for RM4558 and ±18V for RC/RV4558 • Short-circuit protection • No frequency compensation required • No latch-up • Large common-mode and differential voltage ranges • Low power consumption • Parameter tracking over temperature range • Gain and phase match between amplifiers