RF1S45N06LESM, RF1S45N06SM, RF1S4N100SM Selling Leads, Datasheet
MFG:06+ Package Cooled:8000 D/C:TO-
RF1S45N06LESM, RF1S45N06SM, RF1S4N100SM Datasheet download
Part Number: RF1S45N06LESM
MFG: 06+
Package Cooled: 8000
D/C: TO-
RF1S45N06LESM, RF1S45N06SM, RF1S4N100SM
- Table of contents:
Info of RF1S45N06LESM
Info of RF1S45N06SM
Info of RF1S4N100SM
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About RF1S45N06LESM
PDF/DataSheet Download
Datasheet: RF1S45N06LESM
File Size: 437404 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RF1S45N06SM
PDF/DataSheet Download
Datasheet: RF1S45N06SM
File Size: 75629 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RF1S4N100SM
PDF/DataSheet Download
Datasheet: RF1S4N100SM
File Size: 47101 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
RF1S45N06LESM General Description
These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49177.
RF1S45N06LESM Maximum Ratings
| UNITS | |||
| Drain to Source Voltage (Note 1) | VDSS | 60 | V |
| Drain to Gate Voltage (RGS = 20kW)(Note 1) | VDGR | 60 | V |
| Gate to Source Voltage | VGS | ±10 | V |
| Continuous Drain Current | ID | 45 | A |
| Pulsed Drain Current (Note 3) | IDM | Refer to Peak Current Curve | A |
| Pulse Avalanche Rating | EAS | Refer to UIS Curve | A |
| Power Dissipation | PD | 142 | W |
| Derate Above 25 | 0.95 | W/ | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334 |
T L Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
RF1S45N06LESM Features
• 45A, 60V
• r DS(ON) = 0.028
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• r DS(ON) = 0.028
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RF1S45N06SM General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA49028.
RF1S45N06SM Maximum Ratings
| UNITS | |||
| Drain to Source Voltage (Note 1) | VDSS | 60 | V |
| Drain to Gate Voltage (RGS = 20kW)(Note 1) | VDGR | 60 | V |
| Continuous Drain Current | ID | 45 | A |
| Pulsed Drain Current (Note 3) | IDM | Refer to Peak Current Curve | |
| Gate to Source Voltage | VGS | ±20 | V |
| Pulse Avalanche Rating | EAS | Refer to UIS Curve | |
| Power Dissipation | PD | 131 | W |
| Linear Derating Factor | 0.877 | W/ | |
| Operating and Storage Temperature | TJ , TSTG | -55 to 175 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334 |
T L Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
RF1S45N06SM Features
• 45A, 60V
• rDS(ON) = 0.028W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.028W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RF1S4N100SM General Description
The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from an integrated circuit.
Formerly developmental type TA09850.
RF1S4N100SM Maximum Ratings
| UNITS | |||
| Drain to Source Breakdown Voltage (Note 1) | VDS | 1000 | V |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) . | VDGR | 1000 | V |
| Continuous Drain Current | ID | 4.6 | V |
| Pulsed Drain Current (Note 3) | IDM | 17 | A |
| Gate to Source Voltage | VGS | ±20 | V |
| Single Pulse Avalanche Rating | EAS | Refer to UIS Curve | mj |
| (Figures 4, 14, 15) | |||
| Maximum Power Dissipation | PD | 150 | W |
| Linear Derating Factor | 1.2 | W/ | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 150 | |
| Soldering Temperature of Leads for 10s | T L Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
RF1S4N100SM Features
• 4.3A, 1000V
• r DS(ON) = 3.500W
• UIS Rating Curve (Single Pulse)
• -55to 150 Operating Temperature
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• r DS(ON) = 3.500W
• UIS Rating Curve (Single Pulse)
• -55to 150 Operating Temperature
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
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