MFG:RFMD Category:RF and RFID Package Cooled:SOP8 D/C:2008+
RF2304TR7, RF2306, RF2307 Datasheet download
Category: RF and RFID
MFG: RFMD
Package Cooled: SOP8
D/C: 2008+
Description: IC AMP GEN-PURP LOW-NOISE 8-SOIC
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PDF/DataSheet Download
Datasheet: RF2
File Size: 756593 KB
Manufacturer: Willow Technologies Ltd
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RF2306
File Size: 60995 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RF2307
File Size: 60969 KB
Manufacturer: RFMD [RF Micro Devices]
Download : Click here to Download
| Technical/Catalog Information | RF2304TR7 |
| Vendor | RFMD |
| Category | RF and RFID |
| Package / Case | 8-SOIC |
| Voltage - Supply | 2.7V ~ 6V |
| Current - Supply | 7mA ~ 26mA |
| Gain | 8.5dB |
| Frequency | 300MHz ~ 2.5GHz |
| RF Type | ISM, WLAN, FDD, TDD |
| Packaging | Tape & Reel (TR) |
| Noise Figure | 1.9dB |
| P1db | 7.5dBm |
| Test Frequency | 900MHz |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RF2304TR7 RF2304TR7 |
The RF2306 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 2000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified.
| Parameter |
Rating |
Unit |
| Supply Current Input RF Power Operating Ambient Temperature Storage Temperature |
65 +10 -40 to +85 -40 to +150 |
mA dBm °C °C |
The RF2307 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 3000MHz. The device is self-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified.
| Parameter |
Rating |
Unit |
| Supply Current Input RF Power Operating Ambient Temperature Storage Temperature |
65 +10 -40 to +85 -40 to +150 |
mA dBm °C °C |
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