RFK25N18, RFK25N20, RFK25P08 Selling Leads, Datasheet
MFG:MOT/ON Package Cooled:GEN D/C:03+
RFK25N18, RFK25N20, RFK25P08 Datasheet download
Part Number: RFK25N18
MFG: MOT/ON
Package Cooled: GEN
D/C: 03+
RFK25N18, RFK25N20, RFK25P08
- Table of contents:
Info of RFK25N18
Info of RFK25N20
Info of RFK25P08
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About RFK25N18
PDF/DataSheet Download
Datasheet: RFK25N18
File Size: 43601 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFK25N20
PDF/DataSheet Download
Datasheet: RFK25N20
File Size: 43601 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFK25P08
PDF/DataSheet Download
Datasheet: RFK25P08
File Size: 34004 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
RFK25N18 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFK25N18 Maximum Ratings
| RFK25N18 | RFK25N20 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 180 | 200 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 180 | 200 | V |
| Continuous Drain Curren ID | 25 | 25 | A |
| Pulsed Drain Current (Note 3) IDM | 60 | 60 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Linear Derating Factor | 0.0667 | 0.0667 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 0.0667 | 0.0667 | W/oC |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 260 | 260 | o C |
RFK25N18 Features
• 25A, 180V and 200V
• rDS(ON) = 0.150W
• rDS(ON) = 0.150W
RFK25N20 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFK25N20 Maximum Ratings
| RFK25N18 | RFK25N20 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 180 | 200 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 180 | 200 | V |
| Continuous Drain Curren ID | 25 | 25 | A |
| Pulsed Drain Current (Note 3) IDM | 60 | 60 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Linear Derating Factor | 0.0667 | 0.0667 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 0.0667 | 0.0667 | W/oC |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 260 | 260 | o C |
RFK25N20 Features
• 25A, 180V and 200V
• rDS(ON) = 0.150W
• rDS(ON) = 0.150W
RFK25P08 General Description
These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.These types can be operated directly from integrated circuits.Formerly developmental type TA49230.
RFK25P08 Maximum Ratings
| RFH25P08 RFK25P08 |
RFH25P10 RFK25P10 |
UNITS | |
| Drain to Source Voltage (Note 1) VDSS | -80 | -100 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | -80 | -100 | V |
| Continuous Drain Curren ID | -25 | -25 | A |
| Pulsed Drain Current (Note 3) IDM | -60 | -60 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Maximum Power Dissipation | 150 | 150 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 0.0667 | 0.0667 | W/o C |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 (for TO-218AC) Tpkg | 260 | 260 | o C |
RFK25P08 Features
• -25A, -100V and -80V
• rDS(ON) = 0.150W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.150W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
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