RFL2N06L, RFL2N20, RFL2N20L Selling Leads, Datasheet
MFG:WSI Package Cooled:CAN3 D/C:94/96
RFL2N06L, RFL2N20, RFL2N20L Datasheet download
Part Number: RFL2N06L
MFG: WSI
Package Cooled: CAN3
D/C: 94/96
RFL2N06L, RFL2N20, RFL2N20L
- Table of contents:
Info of RFL2N06L
Info of RFL2N20
Info of RFL2N20L
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About RFL2N06L
PDF/DataSheet Download
Datasheet: RFL2N06L
File Size: 314295 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFL1N08
PDF/DataSheet Download
Datasheet: RFL1N08
File Size: 31289 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFL1N08
PDF/DataSheet Download
Datasheet: RFL1N08
File Size: 31289 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
RFL2N06L General Description
The RFL2N06L N-channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits
RFL2N06L Maximum Ratings
| RFL2N06L | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 50 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 60 | V |
| Continuous Drain Current ID | 2 | A |
| Pulsed Drain Current (Note 3) IDM | 10 | A |
| Gate to Source Voltage VGS | ±10 | V |
| Maximum Power Dissipation PD | 8.33 | W |
| Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.0667 | A |
| Pulsed Avalanche Rating UIS | Figures 6, 14, 15 | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
RFL2N06L Features
• 2A, 50V and 60V
• rDS(ON) = 0.950Ω
• Design Optimized for 5V Gate Drives
• Can be Driven from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• rDS(ON) = 0.950Ω
• Design Optimized for 5V Gate Drives
• Can be Driven from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
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