MFG:Fairchild Optoelectronics Group Category:Discrete Semiconductor Products Package Cooled:TO3P D/C:N/A
RHRG30120, RHRG30120CC, RHRG3040 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Optoelectronics Group
Package Cooled: TO3P
D/C: N/A
Description: DIODE HYPER 1200V 30A TO247
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PDF/DataSheet Download
Datasheet: RHRG30120
File Size: 32573 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RHRG30120CC
File Size: 33474 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RHRG3040
File Size: 47434 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | RHRG30120 |
| Vendor | Fairchild Optoelectronics Group |
| Category | Discrete Semiconductor Products |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200V (1.2kV) |
| Current - Average Rectified (Io) | 30A |
| Voltage - Forward (Vf) (Max) @ If | 3.2V @ 30A |
| Reverse Recovery Time (trr) | 85ns |
| Current - Reverse Leakage @ Vr | 250A @ 1200V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole, Radial |
| Package / Case | TO-247 |
| Packaging | Bulk |
| Capacitance @ Vr, F | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RHRG30120 RHRG30120 |
The RHRG30120 is a hyperfast diode with soft recovery characteristics (trr < 65ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of high frequency switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits,thus reducing power loss in the switching transistors.
Formerly developmental type TA49041.
|
RHRG30120 |
UNITS | ||
| Peak Repetitive Reverse Voltage |
VRRM |
1200 |
V |
| Working Peak Reverse Voltage |
VRWM |
1200 |
V |
| DC Blocking Voltage |
VR |
1200 |
V |
| Average Rectified Forward Current (TC = 78) |
IF(AV) |
30 |
A |
| Repetitive Peak Surge Current (Square Wave, 20kHz) |
IFRM |
60 |
A |
| Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz) |
IFSM |
300 |
A |
| Maximum Power Dissipation |
PD |
125 |
W |
|
Avalanche Energy (See Figures 7 and 8) |
EAVL |
30 |
mJ |
| Operating and Storage Temperature |
TSTG,TJ |
-65to+175 |
|
The RHRG30120CC is a hyperfast dual diode with soft recovery characteristics (trr < 65ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of high frequency switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits,thus reducing power loss in the switching transistors.
Formerly developmental type TA49041.
|
RHRG30120CC |
UNITS | ||
| Peak Repetitive Reverse Voltage |
VRRM |
1200 |
V |
| Working Peak Reverse Voltage |
VRWM |
1200 |
V |
| DC Blocking Voltage |
VR |
1200 |
V |
| Average Rectified Forward Current (TC = 78) |
IF(AV) |
30 |
A |
| Repetitive Peak Surge Current (Square Wave, 20kHz) |
IFRM |
60 |
A |
| Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz) |
IFSM |
300 |
A |
| Maximum Power Dissipation |
PD |
125 |
W |
|
Avalanche Energy (See Figures 7 and 8) |
EAVL |
30 |
mJ |
| Operating and Storage Temperature |
TSTG,TJ |
-65to+175 |
|
The RHRG3040 and RHRG3060 are hyperfast diodes with soft recovery characteristics (trr < 40ns). They have half the
recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.
Formerly developmental type TA49063.
| RHRG3040 |
RHRG3060 |
UNITS | ||
| Peak Repetitive Reverse Voltage |
VRRM |
400 |
600 |
V |
| Working Peak Reverse Voltage |
VRWM |
400 |
600 |
V |
| DC Blocking Voltage |
VR |
400 |
600 |
V |
| Average Rectified Forward Current (TC = 120) |
IF(AV) |
30 |
30 |
A |
| Repetitive Peak Surge Current (Square Wave, 20kHz) |
IFRM |
70 |
70 |
A |
| Nonrepetitive Peak Surge Current (Halfwave, 1Phase, 60Hz) |
IFSM |
325 |
325 |
A |
| Maximum Power Dissipation |
PD |
125 |
125 |
W |
|
Avalanche Energy (See Figures 10 and 11) |
EAVL |
20 |
20 |
mJ |
| Operating and Storage Temperature |
TSTG,TJ |
-65to+175 |
-65to+175 |
|
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