RN4607, RN4607/VH, RN4608 Selling Leads, Datasheet
MFG:Toshiba Package Cooled:SOT-16 D/C:05+
RN4607, RN4607/VH, RN4608 Datasheet download
Part Number: RN4607
MFG: Toshiba
Package Cooled: SOT-16
D/C: 05+
RN4607, RN4607/VH, RN4608
- Table of contents:
Info of RN4607
Info of RN4607/VH
Info of RN4608
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About RN4607
PDF/DataSheet Download
Datasheet: RN4607
File Size: 165221 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About RN4058
PDF/DataSheet Download
Datasheet: RN4058
File Size: 144625 KB
Manufacturer:
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About RN4608
PDF/DataSheet Download
Datasheet: RN4608
File Size: 210223 KB
Manufacturer: Toshiba
Download : Click here to Download
RN4607 Maximum Ratings
| Characteristic | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | -50 | V |
| Collector-emitter voltage | VCEO | -50 | V |
| Emitter-base voltage | VEBO | -6 | V |
| Collector current | IC | -100 | mA |
| Characteristic | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | 50 | V |
| Collector-emitter voltage | VCEO | 50 | V |
| Emitter-base voltage | VEBO | 6 | V |
| Collector current | IC | 100 | mA |
| Characteristic | Symbol | Rating | Unit |
| Collector power dissipation | PC * | 300 | mW |
| Junction temperature | Tj | 150 | |
| Storage temperature range | Tstg | −55~150 |
RN4607 Typical Application
·Includeing two devices in SM6 (super mini type with 6 leads)
·With built-in bias resistors
·Simplify circuit design
·Reduce a quantity of parts and manufacturing process
·With built-in bias resistors
·Simplify circuit design
·Reduce a quantity of parts and manufacturing process
RN4608 General Description
The RN4608 is a kind of transistor. It includes a silicon PNP epitaxial type (PCT process) and a silicon NPN epitaxial type (PCT process). It is intended for switching, inverter circuit, interface circuit and driver circuit applications. There are some features as follows: (1)with built-in bias resistors; (2)simplify circuit design; (3)reduce a quantity of parts and manufacturing process; (4)including two devices in SM6 (super mini type with 6 leads).
What comes next is about the maximum ratings (Ta=25). First is about the Q1 section: (1)collector-base voltage, VCBO: -50 V; (2)collector-emitter voltage, VCEO: -50 V; (3)emitter-base voltage, VEBO: -7 V; (4)collector current, IC: -100 mA. Then is about the Q2 section: (1)collector-base voltage, VCBO: 50 V; (2)collector-emitter voltage, VCEO: 50 V; (3)emitter-base voltage, VEBO: 7 V; (4)collector current, IC: 100 mA. The last one is about the Q1, Q2 common maximum ratings: (1)collector power dissipation, PC: 300 mW; (2)junction temperature, Tj: 150; (3)storage temperature range, Tstg: -55 to 150.
The following is about the electrical characteristics (Ta=25). First is about the Q1 section: (1)collector cut-off current, ICBO: -100 nA at VCB=-50 V, IE=0; ICEO: -500 nA max at VCE=-50 V, IB=0; (2)emitter cut-off current, IEBO: -0.078 mA min and -0.145 mA max at VEB=-7 V, IC=0; (3)DC current gain, hFE: 80 min at VCE=-5 V, IC=-10 mA; (4)collector-emitter saturation voltage, VCE(sat): -0.1 V typ and -0.3 V max at IC=-5 mA, IB=-0.25 mA; (6)transition frequency, fT: 200 MHz typ at VCE=-10 V, IC=-5 mA; (5)collector output capacitance, Cob: 3 pF typ and 6 pF max at VCB=-10 V, IE=0, f=1 MHz. Then is about the Q2 section: (1)collector cut-off current, ICBO: 100 nA at VCB=50 V, IE=0; ICEO: 500 nA max at VCE=50 V, IB=0; (2)emitter cut-off current, IEBO: 0.078 mA min and 0.145 mA max at VEB=10 V, IC=0; (3)DC current gain, hFE: 70 min at VCE=5 V, IC=10 mA; (4)collector-emitter saturation voltage, VCE(sat): 0.1 V typ and 0.3 V max at IC=5 mA, IB=0.25 mA; (6)transition frequency, fT: 250 MHz typ at VCE=10 V, IC=5 mA; (5)collector output capacitance, Cob: 3 pF typ and 6 pF max at VCB=10 V, IE=0, f=1 MHz. The input resistor, R1: 15.4k min, 22k typ and 28.6k max.
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