RN4RG40AA, RN5001, RN5002 Selling Leads, Datasheet
MFG:RICOH Package Cooled:SOT-153 D/C:08+
RN4RG40AA, RN5001, RN5002 Datasheet download
Part Number: RN4RG40AA
MFG: RICOH
Package Cooled: SOT-153
D/C: 08+
RN4RG40AA, RN5001, RN5002
- Table of contents:
Info of RN4RG40AA
Info of RN5001
Info of RN5002
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About RN4058
PDF/DataSheet Download
Datasheet: RN4058
File Size: 144625 KB
Manufacturer:
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About RN5001
PDF/DataSheet Download
Datasheet: RN5001
File Size: 145977 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
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About RN5002
PDF/DataSheet Download
Datasheet: RN5002
File Size: 159558 KB
Manufacturer: Toshiba
Download : Click here to Download
RN5001 Maximum Ratings
| Characteristic | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | 30 | V |
| Collector-emitter voltage | VCEO | 30 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 2 | A |
| Base current | IB | 0.4 | A |
| Collector power dissipation | PC | 500 | mW |
| Collector power dissipation | PC * | 1000 | mW |
| Junction temperature | Tj | 150 | |
| Storage temperature range | Tstg | −55~150 |
RN5001 Features
·With built-in bias resistors
·Simplify circuit design
·Reduce a quantity of parts and manufacturing process
·Small flat package
·PC = 1~2W (mounted on ceramic substrate)
·Complementary to RN6001
·Simplify circuit design
·Reduce a quantity of parts and manufacturing process
·Small flat package
·PC = 1~2W (mounted on ceramic substrate)
·Complementary to RN6001
RN5002 General Description
The RN5002 is a kind of transistor. It is a silicon NPN epitaxial type (PCT process). It is designed for motor drive circuit applications, power amplifier applications and power switching applications. There are some features as follows: (1)with built-in bias resistors; (2)simplify circuit design; (3)reduce a quantity of parts and manufacturing process; (4)small flat package; (5)PC=1 to 2 W (mounted on ceramic substrate); (6)complementary to RN6002.
What comes next is about the maximum ratings (Ta=25). (1)collector-base voltage, VCBO: 30 V; (2)collector-emitter voltage, VCES: 30 V; (3)emitter-base voltage, VEBO: 5 V; (4)collector current, IC: 2 A; (5)base current, IB: 0.4 A; (6)collector power dissipation, PC: 500 mW and 1000 mW mounted on ceramic substrate; (7)junction temperature, Tj: 150; (8)storage temperature range, Tstg: -55 to 150.
The following is about the electrical characteristics (Ta=25): (1)collector cut-off current, ICBO: 0.1A max at VCB=30 V, IE=0; (2)emitter cut-off current, IEBO: 0.69 mA min, 0.89 mA typ and 1.28 mA max at VEB=5 V, IC=0; (3)DC current gain, hFE: 100 min and 360 max at VCE=2 V, IC=0.5 A; 50 min at VCE=2 V, IC=2.0 A; (4)collector-emitter saturation voltage, VCE(sat): 0.5 V max at IC=1 A, IB=0.05 A; (5)transition frequency, fT: 120 MHz typ at VCE=2 V, IC=0.5 A; (6)collector output capacitance, Cob: 40 pF typ at VCB=10 V, IE=0, f=1 MHz; (7)resistor, R: 3.9k min, 5.6k typ and 7.3k max.
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