RN5002

The RN5002 is a kind of transistor. It is a silicon NPN epitaxial type (PCT process). RN5002 is designed for motor drive circuit applications, power amplifier applications and power switching applications. There are some features of RN5002 as follows: (1)with built-in bias resistors; (2)simplify circuit design; (3)reduce a quantity of parts and manufacturing process; (4)small flat package; (5)PC=1 to 2 W (mounted on ceramic substrate); (6)complementary to RN6002.

What comes next is about the maximum ratings of RN5002 (Ta=25). (1)collector-base voltage, VCBO: 30 V; (2)collector-emitter voltage, VCES: 30 V; (3)emitter-base voltage, VEBO: 5 V; (4)collector current, IC: 2 A; (5)base current, IB: 0.4 A; (6)collector power dissipation, PC: 500 mW and 1000 mW mounted on ceramic substrate; (7)junction temperature, Tj: 150; (8)storage temperature range, Tstg: -55 to 150.

The following is about the electrical characteristics of RN5002 (Ta=25): (1)collector cut-off current, ICBO: 0.1A max at VCB=30 V, IE=0; (2)emitter cut-off current, IEBO: 0.69 mA min, 0.89 mA typ and 1.28 mA max at VEB=5 V, IC=0; (3)DC current gain, hFE: 100 min and 360 max at VCE=2 V, IC=0.5 A; 50 min at VCE=2 V, IC=2.0 A; (4)collector-emitter saturation voltage, VCE(sat): 0.5 V max at IC=1 A, IB=0.05 A; (5)transition frequency, fT: 120 MHz typ at VCE=2 V, IC=0.5 A; (6)collector output capacitance, Cob: 40 pF typ at VCB=10 V, IE=0, f=1 MHz; (7)resistor, R: 3.9k min, 5.6k typ and 7.3k max.