S6A13, S6A13(Q), S6A14J Selling Leads, Datasheet
MFG:TOS Package Cooled:TO260 D/C:05+
S6A13, S6A13(Q), S6A14J Datasheet download
Part Number: S6A13
MFG: TOS
Package Cooled: TO260
D/C: 05+
S6A13, S6A13(Q), S6A14J
- Table of contents:
Info of S6A13
Info of S6A13(Q)
Info of S6A14J
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About S6A13
PDF/DataSheet Download
Datasheet: S6A13
File Size: 140700 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About S6A0031
PDF/DataSheet Download
Datasheet: S6A0031
File Size: 347752 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
About S6A0031
PDF/DataSheet Download
Datasheet: S6A0031
File Size: 347752 KB
Manufacturer: SAMSUNG [Samsung semiconductor]
Download : Click here to Download
S6A13 Maximum Ratings
| Characteristic |
Symbol |
Rating |
Unit |
| Repetitive peak OFF-state voltage |
VDRM |
800 |
V |
| Repetitive peak surge ON-state current (Note) |
ITRM |
500 |
A |
| Repetitive peak surge forward current (Note)) |
IFRM |
500 |
A |
| Critical rate of rise of ON-state current (Note) |
di/dt |
750 |
A/s |
| Peak gate power dissipation |
PGM |
5 |
W |
| Average gate power dissipation |
PG(AV) |
0.5 |
W |
| Peak forward gate voltage |
VFGM |
10 |
V |
| Peak reverse gate voltage |
VRGM |
-5 |
V |
| Peak forward gate current |
IGM |
2 |
A |
| Junction temperature |
Tj |
-40~125 |
|
| Storage temperature range |
Tstg |
-40~150 |
|
Note: VD 0.8*rated,Tc = 85,igp 60 mA,tgw 10 s,tgr 150 ns
S6A13 Typical Application
`FWD included between cathode and anode
`Critical rate of rise of ON-state current: di/dt = 750 A/s
`Repetitive peak surge ON-state current: ITRM = 500 A (tw = 2 s)
`Repetitive peak OFF-state voltage: VDRM = 800 V
`Gate trigger current: IGT = 30 mA max.
`Critical rate of rise of ON-state current: di/dt = 750 A/s
`Repetitive peak surge ON-state current: ITRM = 500 A (tw = 2 s)
`Repetitive peak OFF-state voltage: VDRM = 800 V
`Gate trigger current: IGT = 30 mA max.
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