SD1012-03, SD1012-13, SD1012-3 Selling Leads, Datasheet
MFG:RF Package Cooled:M113 D/C:ST
SD1012-03, SD1012-13, SD1012-3 Datasheet download
Part Number: SD1012-03
MFG: RF
Package Cooled: M113
D/C: ST
SD1012-03, SD1012-13, SD1012-3
- Table of contents:
Info of SD1012-03
Info of SD1012-13
Info of SD1012-3
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About SD1012-03
PDF/DataSheet Download
Datasheet: SD1012-03
File Size: 197414 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
About SD1002
PDF/DataSheet Download
Datasheet: SD1002
File Size: 51235 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SD1012-3
PDF/DataSheet Download
Datasheet: SD1012-3
File Size: 530960 KB
Manufacturer: Microsemi
Download : Click here to Download
SD1012-03 General Description
The SD1012-03 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications in the 36 175 MHz frequency range. Emitter ballasting is employed to achieve excellent ruggedness under severe load mismatch conditions.
SD1012-03 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-Base Voltage |
36 |
V |
|
VCEO |
Collector-Emitter Voltage |
18 |
V |
|
VCES |
Collector-Emitter Voltage |
36 |
V |
|
VEBO |
Emitter-Base Voltage |
4.0 |
V |
|
IC |
Device Current |
1.8 |
A |
|
PDISS |
Power Dissipation (+25°C) |
20 |
W |
|
TJ |
Junction Temperature |
+200 |
°C |
|
TSTG |
Storage Temperature |
-65 to +150 |
°C |
SD1012-03 Features
175 MHz
12.5 Volts
Efficiency 50%
Common Emitter
POUT = 6 W Min.
GP = 9 dB Gain
12.5 Volts
Efficiency 50%
Common Emitter
POUT = 6 W Min.
GP = 9 dB Gain
SD1012-03 Typical Application
VHF MobileApplications
SD1012-03 Connection Diagram
SD1012-3 General Description
The SD1012-3 is a 12.5V epitaxial silicon NPN planar transistor designed primanly for communications.Features of the SD1012-3 are:(1)frequency is 175MHz;(2)power out is 6W;(3)power gain is 9dB;(4)FM class C transistor;(5)voltage is 12.5V;(6)efficiency is 50%;(7)common emitter.
The absolute maximum ratings of the SD1012-3 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the value is 36.0,the unit is V;(2):the symbol is VCEO,the parameter is collector-emitter voltage,the value is 18.0,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 4.0,the unit is V;(4):the symbol is VCES,the parameter is collector-emitter voltage,the value is 36.0,the unit is V;(5):the symbol is IC,the parameter is collector current(max.),the value is 1.8,the unit is A;(6):the symbol is PTOT,the parameter is total device dissipation ,the value is 20.0,the unit is W;(7):the symbol is TSTG,the parameter is storage temperature,the value is -65 to +150,the unit is ;(8):the symbol is TJ,the parameter is junction temperature,the value is +200,the unit is .
The electrical characteristics of the SD1012-3 can be summarized as:(1):the symbol is BVCEO,the test conditions is IC=10mA,IB=0,the value is 18.0,the unit is V;(2):the symbol is BVEBO,the test conditions is IE=1mA,IC=0,the value is 4.0,the unit is V;(3):the symbol is BVCES,the test conditions is IC=5mA,VBE=0,the value is 36.0,the unit is V;(4):the symbol is ICBO,the test conditions is VCB=15.0V,IE=0,the value is 1.0,the unit is mA;(5):the symbol is hFE,the test conditions is VCE=5.0V,IC=25A,the value is 5.0.
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