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Peak Repetitive Reverse Voltag Working Peak Reverse Voltage DC Blocking Voltage
VRRM VRWM VR
20
30
40
50
60
80
100
V
RMS Reverse Voltage
VR(RMS)
14
21
28
35
42
56
70
V
Average Rectified Output Current @TL = 100
IO
10
A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine- wave superimposed on rated load (JEDEC Method)
IFSM
100
A
Forward Voltage (Note 1) @IF = 10A
VFM
0.55
0.75
0.85
V
Peak Reverse Current @TA= 25 At Rated DC Blocking Voltage @TA= 100
IRM
0.2 50
mA
Typical Junction Capacitance (Note 2)
Cj
600
pF
Typical Thermal Resistance Junction to Ambient
RJA
60
K/W
Operating Temperature Range
Tj
-50 to +125
Storage Temperature Range
TSTG
-50 to +150
SD1030CS Features
Schottky Barrier chip Guard Ring Die Construction Low Profile Package High Surge Current Capability Low Power Loss, High Efficiency Ideal for Printed Circuit Board For Use in Low Voltage, High Frequency Inverters, Free Wheeling Applications
SD1030CS Connection Diagram
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SD103A-T Parameters
Technical/Catalog Information
SD103A-T
Vendor
Diodes Inc
Category
Discrete Semiconductor Products
Diode Type
Schottky
Voltage - DC Reverse (Vr) (Max)
40V
Current - Average Rectified (Io)
350mA (DC)
Voltage - Forward (Vf) (Max) @ If
600mV @ 200mA
Reverse Recovery Time (trr)
10ns
Current - Reverse Leakage @ Vr
5A @ 30V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole, Axial
Package / Case
DO-35, Axial
Packaging
Tape & Reel (TR)
Capacitance @ Vr, F
50pF @ 0V, 1MHz
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
SD103A T SD103AT SD103ADITB ND SD103ADITBND SD103ADITB