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SD1553C25S20K, SD1563, SD1565

Table of contents:
Info of SD1553C25S20K
Info of SD1563
Info of SD1565

SD1553C25S20K, SD1563, SD1565 Selling Leads, Datasheet

MFG:IR Package Cooled:DO-200AC (K-Puk) D/C:00+

SD1553C25S20K, SD1563, SD1565 Datasheet download

Five Points

Part Number: SD1553C25S20K

MFG: IR

Package Cooled: DO-200AC (K-Puk)

D/C: 00+

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SD1563 General Description

The SD1563 is a gold metallized silicon NPN pulse power transistor. The SD1563 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 - 500 MHz.

SD1563 Maximum Ratings

Symbol	Parameter	Value	Unit
V_CBO	Collector-Base Voltage	65	V
V_CES	Collector-Emitter Voltage	65	V
V_EBO	Emitter-Base Voltage	3.5	V
I_C	Device Current	21.6	A
P_DISS	Power Dissipation	875	W
T_J	Junction Temperature	+200
T_STG	Storage Temperature	65 to 150

SD1563 Features

.350 WATTS @ 10SEC PULSE WIDTH,10% DUTY CYCLE
`300 WATTS @ 250SEC PULSE WIDTH,10% DUTY CYCLE
.9.5 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
`EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS
`INFINITE VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS

SD1565 General Description

The SD1565 is a hermetically sealed, gold metallized silicon NPN pulse power transistor mounted in a common base balanced configuration. The SD1565 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 - 500 MHz.

SD1565 Maximum Ratings

Symbol	Parameter	Value	Unit
V_CBO	Collector-Base Voltage	65	V
V_CES	Collector-Emitter Voltage	65	V
V_EBO	Emitter-Base Voltage	3.5	V
I_C	Device Current	43.5	A
P_DISS	Power Dissipation	1167	W
T_J	Junction Temperature	+200
T_STG	Storage Temperature	65 to 200

SD1565 Features

.500 WATTS @ 250Sec PULSE WIDTH,10% DUTY CYCLE
.REFRACTORY GOLD METALLIZATION
`EMITTER BALLASTING AND LOW RESISTANCE FOR RELIABILITY AND RUGGEDNESS
`INFINITE VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS
`INPUT MATCHED, COMMON BASE CONFIGURATION
`BALANCED CONFIGURATION

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