MFG:STMicroelectronics Category:Discrete Semiconductor Products D/C:04+
SD56120M, SD56150, SD565 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled:
D/C: 04+
Description: TRANSISTOR RF PWR LDMOST M252
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PDF/DataSheet Download
Datasheet: SD56120M
File Size: 203828 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SD56150
File Size: 220138 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SD5000
File Size: 517613 KB
Manufacturer: LINEAR [Linear Integrated Systems]
Download : Click here to Download
| Technical/Catalog Information | SD56120M |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | LDMOS |
| Voltage - Rated | 65V |
| Current Rating | 1uA |
| Package / Case | M252 |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SD56120M SD56120M 497 5473 5 ND 49754735ND 497-5473-5 |
The SD56120M is a common source N-Channel enhancement- mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.
The SD56120M is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for TV broadcast applications requiring high linearity.
| Symbol | Parameter | Value | Unit |
| V(BR)DSS | Drain-Source Voltage | 65 | V |
| VGS | Gate-Source Voltage | ± 20 | V |
| ID | Drain Current | 14 | A |
| PDISS | Power Dissipation (@ Tc = 70°C) | 236 | W |
| Tj | Max. Operating Junction Temperature | 200 | °C |
| TSTG | Storage Temperature | -65 to +150 | °C |
The SD56150 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56150 is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for TV broadcast applications requiring high linearity.
| Symbol | Parameter | Value | Unit |
| V(BR)DSS | Drain Source Voltage | 65 | V |
| VGS | Gate-Source Voltage | ± 20 | V |
| ID | Device Current | 17 | A |
| PDISS | Power Dissipation (@ Tc= 70oC) | 236 | W |
| TJ | Max. Operating Junction Temperature | 200 | °C |
| TSTG | Storage Temperature | - 65 to +150 | °C |
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