SD5000I-2

Features: `Quad SPST Switch with Zener Input Protection` Low Interelectrode Capacitance and Leakage` Ultra-High Speed Switching-tON: 1 ns` Ultra-Low Reverse Capacitance: 0.2 pF` Low Guaranteed rDS @ 5 V` Low Turn-On Threshold VoltageApplication· Fast Analog Switch· Fast Sample-and-Holds· Pixel-Rat...

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SD5000I-2 Picture
SeekIC No. : 004486601 Detail

SD5000I-2: Features: `Quad SPST Switch with Zener Input Protection` Low Interelectrode Capacitance and Leakage` Ultra-High Speed Switching-tON: 1 ns` Ultra-Low Reverse Capacitance: 0.2 pF` Low Guaranteed rDS @...

floor Price/Ceiling Price

Part Number:
SD5000I-2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

`Quad SPST Switch with Zener Input Protection
` Low Interelectrode Capacitance and Leakage
` Ultra-High Speed Switching-tON: 1 ns
` Ultra-Low Reverse Capacitance: 0.2 pF
` Low Guaranteed rDS @ 5 V
` Low Turn-On Threshold Voltage



Application

· Fast Analog Switch
· Fast Sample-and-Holds
· Pixel-Rate Switching
· Video Switch
· Multiplexer
· DAC Deglitchers
· High-Speed Driver



Pinout

  Connection Diagram


Specifications

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . .. . . . . . . +30 V/25 V
Gate-Substrate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30 V/0.3 V
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 V
Drain-Source-Substrate Voltage . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . . 25 V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . . . 50 mA
Lead Temperature (1/16" from case for 10 seconds) . . . . . . . . . . . . . 300
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . 65 to 150
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 55 to 150
Power Dissipationa, b: (Package) . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
(Each Device) . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Notes:
a. Derate 4 mW/ above 25



Description

The SD5000I-2 monolithic switch features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. This bidirectional SD5000I-2 provides low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk.

Built on Vishay Siliconix' proprietary DMOS process, the SD5000I-2 utilizes lateral construction to achieve low capacitance and ultra-fast switching speeds. For manufacturing reliability, these devices feature poly-silicon gates protected by Zener diodes.

The SD5000I is available only in the "2" extended hi-rel flow. The Vishay Siliconix "2" flow complies with the requirements of MIL-PRF-19500 for JANTX discrete devices.




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