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SD57030, SD57030-01, SD57045

Table of contents:
Info of SD57030
Info of SD57030-01
Info of SD57045

SD57030, SD57030-01, SD57045 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products D/C:ST

SD57030, SD57030-01, SD57045 Datasheet download

Five Points

Part Number: SD57030

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled:

D/C: ST

Description: TRANSISTOR RF PWR LDMOST M243

Price Break

1
10
100
250
500

Unit Price

54.00000
51.00000
41.25000
39.90000
38.25000

Extended Price

54.00
510.00
4125.00
9975.00
19125.00

(All prices are in USD) Prices for reference only

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SD57030 Parameters

Technical/Catalog Information	SD57030
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	LDMOS
Voltage - Rated	65V
Current Rating	1uA
Package / Case	M243
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD57030 SD57030 497 5475 ND 4975475ND 497-5475

SD57030 General Description

The SD57030 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.

SD57030 Maximum Ratings

Symbol	Parameter	Value	Unit
V_(BR)DSS	Drain-Source Voltage	65	V
V_DGR	Drain-Gate Voltage (R_GS= 1 MW)	65	V
V_GS	Gate-Source Voltage	+ 20	V
I_D	Drain Current	4	A
P_DISS	Power Dissipation (@ Tc= 70^oC)	74	W
T_J	Max. Operating Junction Temperature	200	°C
T_STG	Storage Temperature	- 65 to +150	°C

SD57030 Connection Diagram

SD57030-01 Parameters

Technical/Catalog Information	SD57030-01
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	LDMOS
Voltage - Rated	65V
Current Rating	1uA
Package / Case	M250
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD57030 01 SD5703001 497 5476 ND 4975476ND 497-5476

SD57030-01 General Description

The SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030-01 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base stations applications requiring high linearity.

SD57030-01 Maximum Ratings

Symbol	Parameter	Value	Unit
V_(BR)DSS	Drain Source Voltage	65	V
V_GS	Gate-Source Voltage	± 20	V
I_D	Drain Current	4	A
P_DISS	Power Dissipation (@ Tc= 70^oC)	74	W
T_J	Max. Operating Junction Temperature	200	°C
T_STG	Storage Temperature	- 65 to +150	°C

SD57030-01 Connection Diagram

SD57045 Parameters

Technical/Catalog Information	SD57045
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	LDMOS
Voltage - Rated	65V
Current Rating	1uA
Package / Case	M243
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD57045 SD57045 497 5477 ND 4975477ND 497-5477

SD57045 General Description

The SD57045 is a common source N-Channel Enhancement-Modelateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57045 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base stations applications requiring high linearity

SD57045 Maximum Ratings

Symbol	Parameter	Value	Unit
V_(BR)DSS	Drain Source Voltage	65	V
V_DGR	Drain-Gate Voltage (R_GS = 1 M)	65	V
V_GS	Gate-Source Voltage	± 20	V
I_D	Drain Current	5	A
P_DISS	Power Dissipation (@ Tc = 70 )	93	W
T_j	Max. Operating Junction Temperature	200
T_STG	Storage Temperature	-65 to 200

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