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Sirenza Microdevices' SFT-0100 is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 10/12.5 Gb/s SONET/SDH applications. The SFT-0100 uses high FT indium gallium phosphide device technology that delivers high transimpedance, large dynamic range, and a typical bandwidth greater than 10.5GHz.
Performance is enhanced through the use of a patented circuit topology that reduces duty cycle distortion under high photocurrent conditions and allows high transimpedance with low DC power to be realized. The SFT-0100 is supplied in bare die form and includes a current monitor feature that can be used for fiber alignment or loss of signal (LOS) detection.
SFT-0100 Maximum Ratings
Parameters
Value
Unit
Supply Current (ICC)
60
mA
Device Voltage (VCC)
6.0
V
Maximum DC Input Current
5.0
mA
Operating Temperature (TOP)
0 to +85
ºC
Storage Temperature Range
-40 to +150
ºC
Operating Junction Temperature (TJ)
+150
ºC
SFT-0100 Features
• Low noise InGaP HBT technology • Differential transimpedance ~ 2200 • +5.0V power supply • High sensitivity < • Adjustable dynamic range • Low duty-cycle distortion • Differential Outputs • Photo current monitor • Patented DCDR circuit • Backside vias eliminate the need for ground wirebonds 10pA ⁄ Hz