SGSF665, SGSIF344, SGSIF344FP Selling Leads, Datasheet
MFG:ST Package Cooled:01+ D/C:TO-3
SGSF665, SGSIF344, SGSIF344FP Datasheet download

Part Number: SGSF665
MFG: ST
Package Cooled: 01+
D/C: TO-3
MFG:ST Package Cooled:01+ D/C:TO-3
SGSF665, SGSIF344, SGSIF344FP Datasheet download

MFG: ST
Package Cooled: 01+
D/C: TO-3
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PDF/DataSheet Download
Datasheet: SGS10N60
File Size: 633967 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SGSIF344
File Size: 92626 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SGSIF344FP
File Size: 70577 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
The SGSIF344 and SGSIF444 are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
These transistors are available in ISOWATT220 and ISOWATT218 plastic package respectively.
The SGSF series is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs and monitors.
| Symbol | Parameter | Value | Units | |
| SGSIF344 | SGSIF344 | |||
| VCBS | Collector-Emitter Voltage(IBE= 0) | 1200 | V | |
| VCES | Gate-Emitter Voltage(IB = 0) | 600 | V | |
| VEBO | Emitter-Base Voltage (IC = 0) | 7 | V | |
| IC | Collector Current | 7 | A | |
| I CM | Pulsed Collector Current(tp < 5 ms) | 12 | A | |
| IB | Base Current | 5 | A | |
| IBM | Base Peak Current(tp < 5 ms) | 8 | A | |
| Ptot | Total Dissipation at Tc =25 | 40 | 50 | W |
| Tstg | Storage Temperature Range | -65 to 150 | ||
| TJ | Max. Operating Junction Temperature | 150 | ||
The device is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
It is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs and monitors.
| Symbol | Parameter | Value | Units |
| VCBS | Collector-Emitter Voltage(IE = 0) | 1200 | V |
| VCES | Gate-Emitter Voltage(IB = 0) | 600 | V |
| VEBO | Emitter-Base Voltage (IC = 0) | 7 | V |
| IC | Collector Current | 7 | A |
| I CM | Pulsed Collector Current(tp < 5 ms) | 12 | A |
| IB | Base Current | 5 | A |
| IBM | Base Peak Current(tp < 5 ms) | 8 | A |
| Ptot | Total Dissipation at Tc =25 | 40 | W |
| Tstg | Storage Temperature Range | -65 to 150 | |
| TJ | Max. Operating Junction Temperature | 150 |
