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Part Number: SGS125

 

 

 

 

Description: The SGS125 is a silicon epitaxial-base PNP transistor in monolithic Darlington configuration in SOT82 ...


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SGS125 General Description


The SGS125 is a silicon epitaxial-base PNP transistor in monolithic Darlington configuration in SOT82 plastic package, intented for use in power linear and switching applications.

SGS125 Maximum Ratings

Symbol Parameter
Value
Unit
VCBO Collector-Base Voltage (IE = 0)
-60
V
VCEO Collector-Emitter Voltage (IB = 0)
-60
V
VEBO Base-Emitter Voltage (IC = 0)
-5
V
IC Collector Current
-5
A
ICM Collector Peak Current
-8
A
IB Base Current
-0.1
A
Ptot Total Power Dissipation at Tcase 25
                                         Tamb 25
65
2
W
W
Tstg Storage Temperature
-65 to 150
Tj Max Operating Junction Temperature
150

SGS125 Features

·  SGS-THOMSON PREFERRED SALESTYPE
·  PNP DARLINGTON
·  INTEGRATED ANTIPARALLEL
   COLLECTOR-EMITTER DIODE

SGS125 Typical Application

· GENERAL PURPOSE SWITCHING

SGS125 datasheet

SGS125
PDF/DataSheet Download

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